生命周期: | Transferred | 包装说明: | LEAD FREE, POWER, MINIMOLD PACKAGE-3 |
Reach Compliance Code: | unknown | 风险等级: | 5.72 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.4 A |
基于收集器的最大容量: | 1.3 pF | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NESG240034-T1-A-FB | RENESAS | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD PACKAGE-3 |
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NESG240034-T1FB-A | NEC | RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silic |
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NESG250134 | CEL | NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIM |
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|
NESG250134 | NEC | RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic |
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NESG250134-A | RENESAS | RF & Microwave device |
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NESG250134-AZ | CEL | NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIM |
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