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NESG240033

更新时间: 2024-02-15 20:43:36
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管
页数 文件大小 规格书
10页 225K
描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

NESG240033 技术参数

生命周期:Transferred包装说明:LEAD FREE, MINIMOLD PACKAGE-3
Reach Compliance Code:unknown风险等级:5.72
最大集电极电流 (IC):0.4 A基于收集器的最大容量:1.1 pF
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):10500 MHz
Base Number Matches:1

NESG240033 数据手册

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NESG240033  
The information in this document is current as of November, 2009. The information is subject to  
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purposes in semiconductor product operation and application examples. The incorporation of these  
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M8E0904E  

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