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NESG240034-T1

更新时间： 2024-02-11 20:02:50

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
9页	85K
描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

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中文翻译

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技术参数
数据手册

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NESG240034-T1 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, POWER, MINIMOLD PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.72
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.4 A
基于收集器的最大容量：	1.3 pF	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PSSO-F3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	10000 MHz	Base Number Matches：	1

NESG240034-T1 数据手册

DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

NESG240034

NPN SiGe RF TRANSISTOR FOR

UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION

3-PIN POWER MINIMOLD (34 PKG)

FEATURES

•

The device is an ideal choice for low noise, low distortion amplification.

NF = 0.7 dB TYP. @ V^CE= 5 V, IC = 15 mA, f = 1 GHz

P^{O (1 dB)}= 24 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

OIP³= 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

Maximum stable power gain: MSG =11.5 dB TYP. @ V^CE= 5 V, IC = 40 mA, f = 1 GHz

SiGe HBT technology (UHS2) : f^T= 10.0 GHz

•

This product is improvement of ESD of NESG2xxx series.

3-pin power minimold (34 PKG)

ORDERING INFORMATION

Part Number

NESG240034

Order Number

Package

Quantity

Supplying Form

NESG240034-A

3-pin power minimold 25 pcs

(34 PKG) (Pb-Free) (Non reel)

• Magazine case

NESG240034-T1 NESG240034-T1-A

1 kpcs/reel • 12 mm wide embossed taping

• Pin 2 (Collector) face the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 25 pcs.

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PU10769EJ02V0DS (2nd edition)

Date Published November 2009 NS

Printed in Japan

2009

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...9

中文翻译

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与NESG240034-T1相关器件

型号	品牌	获取价格	描述	数据表
NESG240034-T1-A	NEC	获取价格	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M
NESG240034-T1-A	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD PACKAGE-3
NESG240034-T1-A-FB	RENESAS	获取价格	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD PACKAGE-3
NESG240034-T1FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silic
NESG250134	CEL	获取价格	NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIM
NESG250134	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic
NESG250134-A	RENESAS	获取价格	RF & Microwave device
NESG250134-AZ	CEL	获取价格	NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIM
NESG250134-AZ	RENESAS	获取价格	NESG250134-AZ
NESG250134-AZ	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic

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