Datasheet > 晶体管 > 射频小信号双极晶体管> NESG240033-T1B-A

NESG240033-T1B-A

更新时间： 2024-02-12 00:23:31

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
8页	96K
描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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中文翻译

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技术参数
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NESG240033-T1B-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.36	最大集电极电流 (IC)：	0.4 A
基于收集器的最大容量：	1.1 pF	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e6	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	10500 MHz	Base Number Matches：	1

NESG240033-T1B-A 数据手册

DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

NESG240033

NPN SiGe RF TRANSISTOR FOR

UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION

3-PIN MINIMOLD (33 PKG)

FEATURES

•

The device is an ideal choice for low noise, low distortion amplification.

NF = 0.75 dB TYP. @ V^CE= 5 V, IC = 15 mA, f = 1 GHz

P^{O (1 dB)}= 23.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

OIP³= 35.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

Maximum stable power gain: MSG =13.0 dB TYP. @ V^CE= 5 V, IC = 40 mA, f = 1 GHz

SiGe HBT technology (UHS2) : f^T= 10.5 GHz

•

This product is improvement of ESD of NESG2xxx series.

3-pin minimold (33 PKG)

ORDERING INFORMATION

Part Number

NESG240033

Order Number

Package

Quantity

Supplying Form

NESG240033-A

3-pin minimold

50 pcs

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side

of the tape

(33 PKG) (Pb-Free)

(Non reel)

NESG240033-T1B NESG240033-T1B-A

3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Base Current^{Note 1}

Symbol

VCBO

VCES

VCEO

Ratings

Unit

5.5

°C

Collector Current

400

Note 2

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

480

<R>

150

Tstg

−65 to +150

Notes 1. Depend on the ESD protect device.

2. Mounted on 3.8 cm × 9.0 cm ×0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PU10768EJ02V0DS (2nd edition)

Date Published November 2009 NS

Printed in Japan

2009

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7 8

中文翻译

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与NESG240033-T1B-A相关器件

型号	品牌	获取价格	描述	数据表
NESG240033-T1B-A-FB	RENESAS	获取价格	暂无描述
NESG240033-T1B-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silic
NESG240034	NEC	获取价格	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M
NESG240034	RENESAS	获取价格	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M
NESG240034-A	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD PACKAGE-3
NESG240034-A	NEC	获取价格	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M
NESG240034-A-FB	RENESAS	获取价格	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD PACKAGE-3
NESG240034-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Ultra High Frequency Band, Silic
NESG240034-T1	NEC	获取价格	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M
NESG240034-T1	RENESAS	获取价格	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER M

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