是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP8,.3 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | JESD-30 代码: | R-XDIP-T8 |
JESD-609代码: | e0 | 端子数量: | 8 |
最高工作温度: | 70 °C | 最低工作温度: | |
封装主体材料: | CERAMIC | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 电源: | 5 V |
子类别: | PLL or Frequency Synthesis Circuits | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | BIPOLAR |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE567N | NXP |
获取价格 |
Tone decoder/phase-locked loop | |
NE567N-B | PHILIPS |
获取价格 |
PLL/Frequency Synthesis Circuit, BIPolar, PDIP8 | |
NE567T | NXP |
获取价格 |
IC TELECOM, TONE DECODER CIRCUIT, MBCY8, Telecom Signaling Circuit | |
NE567V | TI |
获取价格 |
Tone Decoder | |
NE56800 | ETC |
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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 150MA I(C) | CHIP | |
NE56803 | ETC |
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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 150MA I(C) | MACRO-X | |
NE56853 | ETC |
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TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 150MA I(C) | RFMOD | |
NE56854 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 150MA I(C) | STX-M2.6 | |
NE56855 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150MA I(C) | FO-102VAR | |
NE56857 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 150MA I(C) | STX-M2.6 |