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NE570

更新时间: 2024-11-23 03:32:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 98K
描述
Compandor

NE570 数据手册

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NE570  
Compandor  
The NE570 is a versatile low cost dual gain control circuit in which  
either channel may be used as a dynamic range compressor or  
expandor. Each channel has a full−wave rectifier to detect the average  
value of the signal, a linerarized temperature−compensated variable  
gain cell, and an operational amplifier.  
The NE570 is well suited for use in cellular radio and radio  
communications systems, modems, telephone, and satellite  
broadcast/receive audio systems.  
http://onsemi.com  
MARKING  
DIAGRAM  
Features  
Complete Compressor and Expandor in One IC  
Temperature Compensated  
Greater than 110 dB Dynamic Range  
16  
NE570D  
AWLYYWWG  
1
Operates Down to 6.0 V  
DC  
System Levels Adjustable with External Components  
Distortion may be Trimmed Out  
Pb−Free Packages are Available*  
SOIC−16 WB  
D SUFFIX  
CASE 751G  
1
Plastic Small Outline Package;  
16 Leads; Body Width 7.5 mm  
Applications  
Cellular Radio  
Telephone Trunk Comandor  
High Level Limiter  
A
= Assembly Location  
WL = Wafer Lot  
YY = Year  
Low Level Expandor − Noise Gate  
Dynamic Noise Reduction Systems  
Voltage−Controlled Amplifier  
Dynamic Filters  
WW = Work Week  
G
= Pb−Free Package  
PIN CONNECTIONS  
MAXIMUM RATINGS  
1
RECT_CAP_1  
RECT_IN_1  
DG_CELL_IN_1  
GND  
16 RECT_CAP_2  
Rating  
Symbol  
Value  
24  
Unit  
2
3
4
5
6
7
8
15  
RECT_IN_2  
Maximum Operating Voltage  
Operating Ambient Temperature Range  
Operating Junction Temperature  
Power Dissipation  
V
V
DC  
CC  
14  
DG_CELL_IN_2  
T
A
0 to +70  
150  
°C  
13  
V
CC  
T
°C  
INV_IN_1  
INV_IN_2  
12  
J
RES_R3_1  
OUTPUT_1  
THD_TRIM_1  
RES_R3_2  
OUTPUT_2  
THD_TRIM_2  
11  
10  
9
P
400  
mW  
D
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
105  
°C/W  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Top View)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
R
3
THD TRIM  
INVERTER IN  
R
20 kW  
3
R 20 kW  
2
VARIABLE  
GAIN  
DG CELL IN  
OUTPUT  
V
REF  
R
30 kW  
4
+
1.8 V  
R 10 kW  
1
RECTIFIER  
RECT IN  
RECT CAP  
Figure 1. Block Diagram  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 4  
NE570/D  

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