NE570
Compandor
The NE570 is a versatile low cost dual gain control circuit in which
either channel may be used as a dynamic range compressor or
expandor. Each channel has a full−wave rectifier to detect the average
value of the signal, a linerarized temperature−compensated variable
gain cell, and an operational amplifier.
The NE570 is well suited for use in cellular radio and radio
communications systems, modems, telephone, and satellite
broadcast/receive audio systems.
http://onsemi.com
MARKING
DIAGRAM
Features
• Complete Compressor and Expandor in One IC
• Temperature Compensated
• Greater than 110 dB Dynamic Range
16
NE570D
AWLYYWWG
1
• Operates Down to 6.0 V
DC
• System Levels Adjustable with External Components
• Distortion may be Trimmed Out
• Pb−Free Packages are Available*
SOIC−16 WB
D SUFFIX
CASE 751G
1
Plastic Small Outline Package;
16 Leads; Body Width 7.5 mm
Applications
• Cellular Radio
• Telephone Trunk Comandor
• High Level Limiter
A
= Assembly Location
WL = Wafer Lot
YY = Year
• Low Level Expandor − Noise Gate
• Dynamic Noise Reduction Systems
• Voltage−Controlled Amplifier
• Dynamic Filters
WW = Work Week
G
= Pb−Free Package
PIN CONNECTIONS
MAXIMUM RATINGS
1
RECT_CAP_1
RECT_IN_1
DG_CELL_IN_1
GND
16 RECT_CAP_2
Rating
Symbol
Value
24
Unit
2
3
4
5
6
7
8
15
RECT_IN_2
Maximum Operating Voltage
Operating Ambient Temperature Range
Operating Junction Temperature
Power Dissipation
V
V
DC
CC
14
DG_CELL_IN_2
T
A
0 to +70
150
°C
13
V
CC
T
°C
INV_IN_1
INV_IN_2
12
J
RES_R3_1
OUTPUT_1
THD_TRIM_1
RES_R3_2
OUTPUT_2
THD_TRIM_2
11
10
9
P
400
mW
D
Thermal Resistance, Junction−to−Ambient
R
q
JA
105
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
R
3
THD TRIM
INVERTER IN
−
R
20 kW
3
R 20 kW
2
VARIABLE
GAIN
DG CELL IN
OUTPUT
V
REF
R
30 kW
4
+
1.8 V
R 10 kW
1
RECTIFIER
RECT IN
RECT CAP
Figure 1. Block Diagram
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2006 − Rev. 4
NE570/D