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NE570D PDF预览

NE570D

更新时间: 2024-11-23 03:32:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 98K
描述
Compandor

NE570D 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:SOIC包装说明:7.5 MM, PLASTIC, SOIC-16
针数:16Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.41模拟集成电路 - 其他类型:COMPANDER
标称带宽:0.02 MHzJESD-30 代码:R-PDSO-G16
JESD-609代码:e0长度:10.3 mm
湿度敏感等级:1功能数量:2
端子数量:16最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:15 V
认证状态:Not Qualified座面最大高度:2.65 mm
子类别:Analog Computational Functions最大供电电流 (Isup):4.8 mA
最大供电电压 (Vsup):24 V最小供电电压 (Vsup):6 V
标称供电电压 (Vsup):6 V表面贴装:YES
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.5 mm
Base Number Matches:1

NE570D 数据手册

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NE570  
Compandor  
The NE570 is a versatile low cost dual gain control circuit in which  
either channel may be used as a dynamic range compressor or  
expandor. Each channel has a full−wave rectifier to detect the average  
value of the signal, a linerarized temperature−compensated variable  
gain cell, and an operational amplifier.  
The NE570 is well suited for use in cellular radio and radio  
communications systems, modems, telephone, and satellite  
broadcast/receive audio systems.  
http://onsemi.com  
MARKING  
DIAGRAM  
Features  
Complete Compressor and Expandor in One IC  
Temperature Compensated  
Greater than 110 dB Dynamic Range  
16  
NE570D  
AWLYYWWG  
1
Operates Down to 6.0 V  
DC  
System Levels Adjustable with External Components  
Distortion may be Trimmed Out  
Pb−Free Packages are Available*  
SOIC−16 WB  
D SUFFIX  
CASE 751G  
1
Plastic Small Outline Package;  
16 Leads; Body Width 7.5 mm  
Applications  
Cellular Radio  
Telephone Trunk Comandor  
High Level Limiter  
A
= Assembly Location  
WL = Wafer Lot  
YY = Year  
Low Level Expandor − Noise Gate  
Dynamic Noise Reduction Systems  
Voltage−Controlled Amplifier  
Dynamic Filters  
WW = Work Week  
G
= Pb−Free Package  
PIN CONNECTIONS  
MAXIMUM RATINGS  
1
RECT_CAP_1  
RECT_IN_1  
DG_CELL_IN_1  
GND  
16 RECT_CAP_2  
Rating  
Symbol  
Value  
24  
Unit  
2
3
4
5
6
7
8
15  
RECT_IN_2  
Maximum Operating Voltage  
Operating Ambient Temperature Range  
Operating Junction Temperature  
Power Dissipation  
V
V
DC  
CC  
14  
DG_CELL_IN_2  
T
A
0 to +70  
150  
°C  
13  
V
CC  
T
°C  
INV_IN_1  
INV_IN_2  
12  
J
RES_R3_1  
OUTPUT_1  
THD_TRIM_1  
RES_R3_2  
OUTPUT_2  
THD_TRIM_2  
11  
10  
9
P
400  
mW  
D
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
105  
°C/W  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Top View)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
R
3
THD TRIM  
INVERTER IN  
R
20 kW  
3
R 20 kW  
2
VARIABLE  
GAIN  
DG CELL IN  
OUTPUT  
V
REF  
R
30 kW  
4
+
1.8 V  
R 10 kW  
1
RECTIFIER  
RECT IN  
RECT CAP  
Figure 1. Block Diagram  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 4  
NE570/D  

NE570D 替代型号

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