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NE3509M04-T2B-A PDF预览

NE3509M04-T2B-A

更新时间: 2024-02-22 07:35:16
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
10页 82K
描述
RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET, LEAD FREE, SUPER MINIMOLD, M04, 4 PIN

NE3509M04-T2B-A 技术参数

生命周期:Transferred包装说明:LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
Reach Compliance Code:unknown风险等级:5.76
配置:SINGLE最小漏源击穿电压:3 V
最大漏极电流 (ID):0.02 AFET 技术:HETERO-JUNCTION
最高频带:S BANDJESD-30 代码:R-PDSO-F4
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):16 dB
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NE3509M04-T2B-A 数据手册

 浏览型号NE3509M04-T2B-A的Datasheet PDF文件第4页浏览型号NE3509M04-T2B-A的Datasheet PDF文件第5页浏览型号NE3509M04-T2B-A的Datasheet PDF文件第6页浏览型号NE3509M04-T2B-A的Datasheet PDF文件第7页浏览型号NE3509M04-T2B-A的Datasheet PDF文件第8页浏览型号NE3509M04-T2B-A的Datasheet PDF文件第10页 
NE3509M04  
The information in this document is current as of October, 2008. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
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purposes in semiconductor product operation and application examples. The incorporation of these  
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M8E 02. 11-1  
9
Data Sheet PG10608EJ02V0DS  

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