Datasheet > NCE80TD60BP

NCE80TD60BP

更新时间： 2024-04-09 18:58:54

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
9页	1423K
描述
新洁能提供击穿电压等级范围为600V至650V的N沟道IGBT器件。通过注入增强（InjectionEnhance,IE）与场截止（FieldStop，FS）技术，新洁能IGBT系列产品在提供行业

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NCE80TD60BP 数据手册

Pb Free Product

NCE80TD60BP

Thermal Characteristic

Symbol

Parameter

Value

0.36

0.44

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to case for IGBT

Thermal Resistance, Junction to case for Diode

Thermal Resistance, Junction to Ambient

Electrical Characteristics (T_C=25°C unless otherwise noted)

Value

Symbol

Parameter

Conditions

Units

Min.

Typ.

Max.

Static Characteristics

V_(BR)CES

I_CES

I_GES(F)

I_GES(R)

Collector-Emitter Breakdown Voltage

Collector-Emitter Leakage Current

Gate to Emitter Forward Leakage

Gate to Emitter Reverse Leakage

V_GE=0V,I_CE=1mA

V_GE=0V,V_CE=600V

V_GE=+30V,V_CE=0V

V_GE=-30V,V_CE=0V

600

200

1.9

T_j=25°C

1.7

1.9

5.0

I_C=80A

V_CE(sat)

V_GE(th)

Collector-Emitter Saturation Voltage

Gate Threshold Voltage

V_GE=15V T_j=175°C

I_C=1mA,V_CE=V_GE

4.0

6.0

Dynamic Characteristics

C_ies

C_oes

C_res

Q_g

Input Capacitance

9188

258

181

331

V_CE=25V,V_GE=0V,

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

V_CC=480V, I_C=80A,

V_GE=15V

Q_ge

Q_gc

Gate to Emitter Charge

Gate to Collector Charge

136

Short circuit collector current Max.1000

short circuits Time between short circuits:

≥1.0s

V_GE=15V,V_CC≤400V,

_SC≤5us,T_j≤150°C

I_C(SC)

450

Switching Characteristics

t_d(ON)Turn-on Delay Time

t_r

t_d(OFF)

t_f

Rise Time

Turn-Off Delay Time

Fall Time

172

V_CC=400V,I_C=80A,

V_GE=0/15V, R_g=5Ω,

Inductive Load

E_on

E_off

E_ts

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

1.6

1.2

2.8

2.0

1.6

3.6

E_on

E_off

E_ts

V_CC=400V,I_C=80A,

V_GE=0/15V,R_g=5Ω,

T_j=175°C

Wuxi NCE Power Co., Ltd

Page

V2.0

http://www.ncepower.com

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