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NCE8205 PDF预览

NCE8205

更新时间: 2024-11-21 10:28:39
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 382K
描述
NCE N-Channel Enhancement Mode Power MOSFET

NCE8205 数据手册

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Pb Free Product  
http://www.ncepower.com  
NCE8205  
NCE N-Channel Enhancement Mode Power MOSFET  
D1  
D2  
Description  
The NCE8205 uses advanced trench technology to provide  
G1  
G2  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 2.5V. This device is suitable for use as a  
Battery protection or in other Switching application.  
S1  
Schematic diagram  
S2  
General Features  
VDS = 20V,ID = 4A  
RDS(ON) < 45m@ VGS=2.5V  
RDS(ON) < 30m@ VGS=4.5V  
High Power and current handing capability  
Lead free product is acquired  
Surface Mount Package  
Marking and pin Assignment  
Application  
Battery protection  
Load switch  
Power management  
SOT23-6L top view  
Package Marking And Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
3000 units  
8205  
NCE8205  
SOT23-6L  
Ø180mm  
8mm  
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter Symbol  
Limit  
20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VDS  
VGS  
ID  
±10  
4
A
Drain Current-Pulsed (Note 1)  
25  
A
IDM  
Maximum Power Dissipation  
1.25  
W
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
100  
/W  
Electrical Characteristics (TA=25unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ  
Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
BVDSS  
IDSS  
VGS=0V ID=250μA  
20  
V
VDS=20V,VGS=0V  
1
μA  
Wuxi NCE Power Semiconductor Co., Ltd  
Page 1  
v1.0  

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