Datasheet > NCE85H21TC

NCE85H21TC

更新时间： 2024-11-26 17:02:03

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	285K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE85H21TC 数据手册

Pb Free Product

http://www.ncepower.com

NCE85H21TC

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE85H21TC uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It can

be used in automotive applications and a wide variety of other

applications.

General Features

● V_DSS=85V,I_D=210A

R_DS(ON)<4.9mΩ @ V_GS=10V

Schematic diagram

● Good stability and uniformity with high E_AS

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Excellent package for good heat dissipation

Application

● Automotive applications

TO-247 top view

● Hard switched and high frequency circuits

● Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE85H21TC

TO-247

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V^DSS

V^GS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

210

150

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

850

Maximum Power Dissipation

300

P_D

Derating factor

Single pulse avalanche energy ^{(Note 3)}

2.0

W/℃

℃

E_AS

1800

-55 To 175

Operating Junction and Storage Temperature Range

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case ^{(Note 1)}

R_θJC

0.5

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v1.1

12 3 4 5 6 7

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