NCE60P16AK
http://www.ncepower.com
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-60V,VGS=0V
VGS=±20V,VDS=0V
-60
-
-
-
-
V
-
-
-1
μA
nA
IGSS
±100
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-8A
VDS=-5V,ID=-8A
-1.0
-1.5
55
-2.0
65
85
-
V
mΩ
mΩ
S
-
-
-
Drain-Source On-State Resistance
65
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
15
Clss
Coss
Crss
-
-
-
1108
73.7
58.2
-
-
-
PF
PF
PF
VDS=-30V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
8
4
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=-30V, RL=3.75Ω,
VGS=-10V,RG=3Ω
Turn-Off Delay Time
32
7
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
23.4
4.1
4.8
VDS=-30,ID=-8A,
Gate-Source Charge
VGS=-10V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=-16A
-
-
-
-
-1.2
-16
V
A
-
trr
TJ = 25°C, IF =- 8A
di/dt = -100A/μs(Note3)
25
31
nS
nC
Reverse Recovery Charge
Qrr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
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