Datasheet > NCE60P55K

NCE60P55K

更新时间： 2024-11-21 15:18:51

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	665K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE60P55K 数据手册

http://www.ncepower.com

NCE60P55K

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE60P55K uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge .This

device is well suited for high current load applications.

General Features

● V_DS=-60V,I_D=-55A

R_DS(ON)<28mΩ @ V_GS=-10V

Schematic diagram

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Application

● High side switch for full bridge converter

● DC/DC converter for LCD display

Marking and pin assignment

100% UIS TESTED!

100% ΔVds TESTED!

TO-252 -2Ltop view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE60P55K

TO-252-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

-55

-38.8

-220

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

110

P_D

Derating factor

0.73

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

273

-55 To 175

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6 7

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