NCE60P04SN
http://www.ncepower.com
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-60V,VGS=0V
VGS=±20V,VDS=0V
-60
-
-
-
-
V
-
-
-1
μA
nA
IGSS
±100
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VDS=-5V,ID=-4A
-1.0
-1.8
106
135
10
-2.5
120
170
-
V
mΩ
mΩ
S
-
-
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Coss
Crss
-
-
-
930
85
-
-
-
PF
PF
PF
VDS=-30V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
35
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
8
4
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=-30V, RL=7.5Ω,
VGS=-10V,RG=3Ω
Turn-Off Delay Time
32
7
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
25
3
VDS=-30,ID=-4A,
Gate-Source Charge
VGS=-10V
Gate-Drain Charge
7
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
VSD
IS
VGS=0V,IS=-4A
-
-
-
-
-1.2
-4
V
A
-
trr
TJ = 25°C, IF =- 4A
di/dt = -100A/μs(Note3)
25
31
nS
nC
Reverse Recovery Charge
Qrr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any
given application depends on the user's specific board design. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to
ambient.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
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