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NCE60P04SN PDF预览

NCE60P04SN

更新时间: 2024-03-03 10:10:57
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
7页 358K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE60P04SN 数据手册

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NCE60P04SN  
http://www.ncepower.com  
Electrical Characteristics (TC=25unless otherwise noted)  
Parameter  
Symbol  
Condition  
Min Typ  
Max  
Unit  
Off Characteristics  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
On Characteristics (Note 3)  
BVDSS  
IDSS  
VGS=0V ID=-250μA  
VDS=-60V,VGS=0V  
VGS=±20V,VDS=0V  
-60  
-
-
-
-
V
-
-
-1  
μA  
nA  
IGSS  
±100  
Gate Threshold Voltage  
VGS(th)  
RDS(ON)  
gFS  
VDS=VGS,ID=-250μA  
VGS=-10V, ID=-4A  
VGS=-4.5V, ID=-3A  
VDS=-5V,ID=-4A  
-1.0  
-1.8  
106  
135  
10  
-2.5  
120  
170  
-
V
mΩ  
mΩ  
S
-
-
-
Drain-Source On-State Resistance  
Forward Transconductance  
Dynamic Characteristics (Note4)  
Input Capacitance  
Clss  
Coss  
Crss  
-
-
-
930  
85  
-
-
-
PF  
PF  
PF  
VDS=-30V,VGS=0V,  
F=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics (Note 4)  
Turn-on Delay Time  
35  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
8
4
-
-
-
-
-
-
-
nS  
nS  
nS  
nS  
nC  
nC  
nC  
Turn-on Rise Time  
VDD=-30V, RL=7.5,  
VGS=-10V,RG=3Ω  
Turn-Off Delay Time  
32  
7
Turn-Off Fall Time  
Total Gate Charge  
Qg  
Qgs  
Qgd  
25  
3
VDS=-30,ID=-4A,  
Gate-Source Charge  
VGS=-10V  
Gate-Drain Charge  
7
Drain-Source Diode Characteristics  
Diode Forward Voltage (Note 3)  
Diode Forward Current (Note 2)  
Reverse Recovery Time  
VSD  
IS  
VGS=0V,IS=-4A  
-
-
-
-
-1.2  
-4  
V
A
-
trr  
TJ = 25°C, IF =- 4A  
di/dt = -100A/μs(Note3)  
25  
31  
nS  
nC  
Reverse Recovery Charge  
Qrr  
Notes:  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any  
given application depends on the user's specific board design. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to  
ambient.  
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.  
4. Guaranteed by design, not subject to production  
Wuxi NCE Power Co., Ltd  
Page 2  
V2.0  

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