NCE60P09S
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE60P09S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =-60V,ID =-9A
RDS(ON) <38mΩ @ VGS=-10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
●
●
●
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE60P09S
NCE60P09S
SOP-8
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
-60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
-9
-6.4
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
36
A
Maximum Power Dissipation
3.0
W
mJ
℃
PD
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
156
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
41.7
℃/W
Wuxi NCE Power Co., Ltd
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V4.0