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NCE60P09K PDF预览

NCE60P09K

更新时间: 2024-11-18 15:18:23
品牌 Logo 应用领域
新洁能 - NCEPOWER 开关
页数 文件大小 规格书
7页 655K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型(Trench)功率MOSFET产品,采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

NCE60P09K 数据手册

 浏览型号NCE60P09K的Datasheet PDF文件第2页浏览型号NCE60P09K的Datasheet PDF文件第3页浏览型号NCE60P09K的Datasheet PDF文件第4页浏览型号NCE60P09K的Datasheet PDF文件第5页浏览型号NCE60P09K的Datasheet PDF文件第6页浏览型号NCE60P09K的Datasheet PDF文件第7页 
http://www.ncepower.com  
NCE60P09K  
NCE P-Channel Enhancement Mode Power MOSFET  
General Features  
Description  
VDS =-60V,ID =-9A  
DS(ON) <173mΩ @ VGS=-10V ID=-7A  
RDS(ON) <210mΩ @ VGS=-10V ID=-9A  
DS(ON) <220mΩ @ VGS=-4.5V ID=-4A  
The NCE60P09K uses advanced trench technology and design  
to provide excellent RDS(ON) with low gate charge .This device is  
well suited for use as a load switch or in PWM applications.  
R
R
Application  
Load switch  
High density cell design for ultra low Rdson  
Fully characterized avalanche voltage and current  
Excellent package for good heat dissipation  
175 °C operating temperature  
PWM application  
100% UIS TESTED!  
100% ΔVds TESTED!  
Pb-free lead plating  
TO-252  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCE60P09K  
NCE60P09K  
TO-252  
Ø330mm  
16mm  
2500 units  
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-60  
Unit  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
±20  
VGS  
Drain Current-Continuous  
Pulsed Drain Current (Note 1)  
-9  
-36  
40  
24  
A
ID  
A
IDM  
PD  
Maximum Power Dissipation  
W
mJ  
Single pulse avalanche energy (Note 5)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance, Junction-to-Case(Note 2)  
RθJC  
3.75  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V3.0  

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NCE P-Channel Enhancement Mode Power MOSFET