NCE60P16AK
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE60P16AK uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for use as a load switch or in PWM
applications.
Schematic diagram
General Features
● VDS =-60V,ID =-16A
RDS(ON) <65mΩ @ VGS=-10V
RDS(ON) <85mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Marking and pin assignment
Application
● Load switch
● PWM application
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252 -2Ltop view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE60P16AK
NCE60P16AK
TO-252-2L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
VGS
ID
Limit
-60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Pulsed Drain Current
V
V
±20
-16
-64
A
A
IDM
Maximum Power Dissipation
32
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.21
W/℃
mJ
℃
EAS
65
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance, Junction-to-Case(Note 2)
RθJC
4.68
℃/W
Wuxi NCE Power Co., Ltd
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