http://www.ncepower.com
NCE60P05R
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE60P05R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge .This
device is well suited for use as a load switch or in PWM
applications.
General Features
● VDS =-60V,ID =-5A
Schematic diagram
RDS(ON) <65mΩ @ VGS=-10V
RDS(ON) <85mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Load switch
SOT-223 top view
● PWM application
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE60P05R
NCE60P05R
SOT-223-3L
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
-60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Pulsed Drain Current
V
V
VDS
±20
VGS
-5
-20
A
ID
A
IDM
Maximum Power Dissipation
3.1
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient(Note 2)
RθJA
40.3
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=-250μA
-60
-
-
-
-
V
VDS=-60V,VGS=0V
-1
μA
Wuxi NCE Power Co., Ltd
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