Datasheet > NCE3080IA

NCE3080IA

更新时间： 2024-04-09 18:59:42

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	283K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE3080IA 数据手册

NCE3080IA

http://www.ncepower.com

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.8

℃/W

Electrical Characteristics (T_C=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

On Characteristics ^{(Note 3)}

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=30V,V_GS=0V

V_GS=±20V,V_DS=0V

μA

I_GSS

±100

Gate Threshold Voltage

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=250μA

0.7

1.1

5.5

7.5

1.4

6.5

mΩ

V_GS=10V, I_D=30A

Drain-Source On-State Resistance

V_GS=5V, I_D=24A

Forward Transconductance

Dynamic Characteristics ^(Note4)

Input Capacitance

V_DS=5V,I_D=24A

C_lss

C_oss

C_rss

2330

460

V_DS=15V,V_GS=0V,

Output Capacitance

F=1.0MHz

Reverse Transfer Capacitance

Switching Characteristics ^{(Note 4)}

Turn-on Delay Time

230

t_d(on)

t_r

t_d(off)

t_f

Turn-on Rise Time

V_DD=10V,I_D=30A

V_GS=10V,R_GEN=2.7Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS=10V,I_D=30A,

Gate-Source Charge

V_GS=10V

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage ^{(Note 3)}

Diode Forward Current ^{(Note 2)}

Reverse Recovery Time

V_SD

I_S

V_GS=0V,I_S=24A

1.2

t_rr

TJ = 25°C, IF = 30A

di/dt = 100A/μs^(Note3)

Reverse Recovery Charge

Forward Turn-On Time

Qrr

t_on

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition：Tj=25℃,V_DD=15V,V_G=10V,L=0.5mH,Rg=25Ω，I_AS=35A

Wuxi NCE Power Co., Ltd

Page 2

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