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NCE30H10K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE30H10K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =100A
RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ)
RDS(ON) <6.0mΩ @ VGS=4.5V (Typ:4.2mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Application
●
●
●
Power switching application
Marking and pin assignment
Hard switched and high frequency circuits
Uninterruptible power supply
100% UIS TESTED!
100% ΔVds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE30H10K
NCE30H10K
TO-252-2L
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
V
V
VDS
VGS
Gate-Source Voltage
±20
Drain Current-Continuous
100
70
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
400
A
Maximum Power Dissipation
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
110
W
mJ
℃
PD
EAS
350
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.36
℃/W
Wuxi NCE Power Co., Ltd
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V3.0