PbFreeProduct
NCE25TD135LT
Thermal Characteristic
Symbol
Parameter
Value
0.41
0.86
40
Units
°C/W
°C/W
°C/W
RθJC
RθJC
RθJA
Thermal Resistance, Junction to case for IGBT
Thermal Resistance, Junction to case for Diode
Thermal Resistance, Junction to Ambient
Electrical Characteristics (TC=25°C unless otherwise noted)
Value
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Static Characteristics
V(BR)CES
ICES
IGES(F)
IGES(R)
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Gate to Emitter Forward Leakage
Gate to Source Reverse Leakage
VGE=0V,ICE=1mA
VGE =0V,VCE=1350V
VGE=+30V,VCE=0V
1350
--
--
--
--
5
V
uA
nA
nA
--
--
200
200
1.85
--
VGE=-30V,VCE =0V
--
--
VGE=15V,IC=25A, Tj=25°C
VGE=15V,IC=30A, Tj=25°C
VGE=15V,IC=25A, Tj=150°C
IC=1mA, VCE=VGE
--
1.60
1.70
1.85
--
VCE(sat)
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
--
V
V
--
--
VGE(th)
5.0
6.5
Dynamic Characteristics
Cies
Coes
Cres
Qg
Input Capacitance
--
--
--
--
--
--
2674
72
--
--
--
--
--
--
VCE=30V,VGE=0V,
f=1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
59
146
28
nC
nC
nC
VCC=960V, IC=25A
VGE=15V
Qge
Qgc
Gate to Emitter Charge
Gate to Collector Charge
84
Switching Characteristics
td(ON) Turn-on Delay Time
tr
td(OFF)
tf
--
--
--
--
--
--
--
19
17
--
--
--
--
--
--
--
Rise Time
ns
Turn-Off Delay Time
Fall Time
170
18
VCE=600V,IC=25A
VGE=0/15V, Rg=5Ω
Inductive Load
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
2.0
1.5
3.5
mJ
Electrical Characteristics of the Diode (TC= 25°C unless otherwise specified):
Rating
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
2.5
Max.
3.4
--
VFM
Trr
Diode Forward Voltage
IF=12.5A
--
--
--
--
V
ns
A
Reverse Recovery Time
120
12
IF=12.5A,
IRRM
Qrr
Diode Peak Reverse Recovery Current
Reverse Recovery Charge
--
di/dt=200A/us
0.72
--
uC
Pulse width ttp≤380µs,δ≤2%
Wuxi NCE Power Co., Ltd
Page
V2.0
2
http://www.ncepower.com