http://www.ncepower.com
NCE3040Q
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3040Q uses advanced trench technology and design
General Features
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
● VDS =30V,ID =40A
RDS(ON)=5.7mΩ (typical) @ VGS=10V
RDS(ON)=10.0mΩ (typical) @ VGS=4.5V
Application
● DC/DC Converter
● High density cell design for ultra low Rdson
●
Ideal for high-frequency switching and synchronous ● Very low on-resistance RDS(on)
rectification
● Good stability and uniformity with high EAS
● 150 °C operating temperature
● Pb-free lead plating
100% UIS TESTED!
100% ΔVds TESTED!
DFN 3.3X3.3
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE3040Q
NCE3040Q
DFN 3.3x3.3-8L
Ø330mm
12mm
5000 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
VGS
±20
(Note 1)
40
28.3
160
35
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
A
Maximum Power Dissipation
W
PD
Derating factor
0.28
150
W/℃
mJ
℃
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.6
℃/W
Wuxi NCE Power Co., Ltd
Page 1
V4.0