Datasheet > NCE3011E*

NCE3011E*

更新时间： 2024-04-09 19:02:39

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	357K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE3011E* 数据手册

Pb Free Product

http://www.ncepower.com

NCE3011E

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE3011E uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.It is ESD protested.

Schematic diagram

General Features

● V_DS= 30V,I_D=11A

R_DS(ON)< 10mΩ @ V_GS=10V

R_DS(ON)< 14mΩ @ V_GS=4.5V

ESD Rating: 2000V HBM

● High power and current handing capability

● Lead free product is acquired

● Surface mount package

Application

●PWM application

●Load switch

Marking and pin assignment

SOP-8 top view

Tape width

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

2500 units

3011E

NCE3011E

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

±10

V^DS

Gate-Source Voltage

V^GS

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_D

I_DM

Maximum Power Dissipation

2.5

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Wuxi NCE Power Semiconductor Co., Ltd

Page 1

v1.0

12 3 4 5 6 7

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