http://www.ncepower.com
NCE3020Q
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3020Q uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =30V,ID =20A
Schematic Diagram
RDS(ON) <8mΩ @ VGS=10V
RDS(ON) <12mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
pin assignment
Application
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
100% UIS TESTED!
Top View
Bottom View
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE3020Q
NCE3020Q
DFN3.3X3.3-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter Symbol
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
VGS
±20
20
14.1
80
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
A
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
20
W
W/℃
mJ
V
PD
0.27
72
EAS
VDS Spike (Note 6)
10μs
36
Operating Junction and Storage Temperature Range
-55 To 150
6.25
℃
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
℃/W
Wuxi NCE Power Co., Ltd
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