Datasheet > NCE3015S

NCE3015S

更新时间： 2024-04-09 19:01:31

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	296K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE3015S 数据手册

http://www.ncepower.com

NCE3015S

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE3015S uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

● V_DS=30V,I_D=15A

Schematic diagram

R_DS(ON)<7.0mΩ @ V_GS=10V

R_DS(ON)< 9.5mΩ @ V_GS=5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

Application

Marking and pin assignment

●

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

100% UIS TESTED!

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE3015S

SOP-8

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V^DS

V^GS

Gate-Source Voltage

±20

Drain Current-Continuous

10.6

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

3.5

℃

P_D

E_AS

120

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

℃/W

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=30V,V_GS=0V

μA

Wuxi NCE Power Co., Ltd

Page 1

V2.0

12 3 4 5 6 7

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