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N3022ZC200 PDF预览

N3022ZC200

更新时间: 2024-11-20 14:35:03
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
11页 282K
描述
Silicon Controlled Rectifier, 5964A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element

N3022ZC200 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.92配置:SINGLE
最大直流栅极触发电流:300 mAJESD-30 代码:O-CXDB-X3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:5964 A
断态重复峰值电压:2000 V重复峰值反向电压:2000 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

N3022ZC200 数据手册

 浏览型号N3022ZC200的Datasheet PDF文件第2页浏览型号N3022ZC200的Datasheet PDF文件第3页浏览型号N3022ZC200的Datasheet PDF文件第4页浏览型号N3022ZC200的Datasheet PDF文件第5页浏览型号N3022ZC200的Datasheet PDF文件第6页浏览型号N3022ZC200的Datasheet PDF文件第7页 
Date:- 1 Mar, 2004  
Data Sheet Issue:- 1  
WESTCODE  
IXYS  
An  
Company  
Phase Control Thyristor  
Types N3022Z#140 to N3022Z#220  
Old Type No.: N980CH02-20  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
1400-2200  
1400-2200  
1400-2200  
1500-2300  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
V
V
V
V
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
IT(RMS)  
IT(d.c.)  
ITSM  
Maximum average on-state current. Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current. Tsink=25°C, (note 2)  
D.C. on-state current. Tsink=25°C, (note 4)  
3022  
A
A
2075  
1256  
A
5964  
A
5171  
A
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)  
45.6  
kA  
kA  
A2s  
A2s  
ITSM2  
55.0  
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)  
I2t  
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)  
10.40×106  
15.13×106  
75  
I2t  
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)  
Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)  
(di/dt)cr Maximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
150  
A/µs  
300  
VRGM  
PG(AV)  
PGM  
VGD  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
5
V
W
W
V
5
30  
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
Storage temperature range  
0.25  
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Notes: -  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types N3022Z#140 to N3022Z#220 Issue 1.  
Page 1 of 11  
March, 2004  

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