Datasheet > N3022ZD220

N3022ZD220

更新时间： 2024-11-18 19:19:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
11页	275K
描述
Silicon Controlled Rectifier, 5964A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element

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N3022ZD220 数据手册

Date:- 1 Mar, 2004

Data Sheet Issue:- 1

WESTCODE

IXYS

Company

Phase Control Thyristor

Types N3022Z#140 to N3022Z#220

Old Type No.: N980CH02-20

Absolute Maximum Ratings

MAXIMUM

LIMITS

1400-2200

1500-2300

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)

I_T(d.c.)

I_TSM

Maximum average on-state current. T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current. T_sink=25°C, (note 2)

D.C. on-state current. T_sink=25°C, (note 4)

3022

2075

1256

5964

5171

Peak non-repetitive surge t_p=10ms, V_rm=0.6V_RRM, (note 5)

45.6

A²s

I_TSM2

≤

55.0

Peak non-repetitive surge t_p=10ms, V_rm10V, (note 5)

I²t

I²t capacity for fusing t_p=10ms, V_rm=0.6V_RRM, (note 5)

10.40×10⁶

15.13×10⁶

I²t

≤

I²t capacity for fusing t_p=10ms, V_rm10V, (note 5)

Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)

(di/dt)_crMaximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

150

A/µs

300

V_RGM

P_G(AV)

P_GM

V_GD

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

Storage temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Notes: -

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_TM=1000A, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types N3022Z#140 to N3022Z#220 Issue 1.

Page 1 of 11

March, 2004

12 3 4 5 6 7...11

中文翻译

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与N3022ZD220相关器件

型号	品牌	获取价格	描述	数据表
N3029ZC240	IXYS	获取价格	Silicon Controlled Rectifier, 5967A I(T)RMS, 2400V V(DRM), 2400V V(RRM), 1 Element
N3029ZC240	LITTELFUSE	获取价格	Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。器件电压范围在400V至
N3029ZC260	IXYS	获取价格	Silicon Controlled Rectifier, 5967A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element
N3029ZC280	IXYS	获取价格	Silicon Controlled Rectifier, 5967A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
N3029ZC280	LITTELFUSE	获取价格	Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。器件电压范围在400V至
N3029ZD240	IXYS	获取价格	Silicon Controlled Rectifier, 5967A I(T)RMS, 2400V V(DRM), 2400V V(RRM), 1 Element
N3029ZD240	LITTELFUSE	获取价格	Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。器件电压范围在400V至
N3029ZD260	IXYS	获取价格	Silicon Controlled Rectifier, 5967A I(T)RMS, 2600V V(DRM), 2600V V(RRM), 1 Element
N3029ZD280	IXYS	获取价格	Silicon Controlled Rectifier, 5967A I(T)RMS, 2800V V(DRM), 2800V V(RRM), 1 Element
N3029ZD280	LITTELFUSE	获取价格	Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。器件电压范围在400V至

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