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N302AS

更新时间: 2024-11-17 22:29:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
11页 247K
描述
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

N302AS 数据手册

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April 2002  
ISL9N302AS3ST  
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs  
General Description  
Features  
This device employs a new advanced trench MOSFET  
technology and features low gate charge while maintaining  
low on-resistance.  
Fast switching  
r
r
DS(ON) = 0.0019(Typ), VGS = 10V  
DS(ON) = 0.0027(Typ), VGS = 4.5V  
Optimized for switching applications, this device improves  
the overall efficiency of DC/DC converters and allows  
operation to higher switching frequencies.  
Q
g (Typ) = 110nC, VGS = 5V  
Qgd (Typ) = 31nC  
Applications  
DC/DC converters  
C
ISS (Typ) = 11000pF  
DRAIN  
(FLANGE)  
D
S
GATE  
G
SOURCE  
TO-263AB  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDSS  
VGS  
Parameter  
Ratings  
30  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
V
V
±20  
Continuous (TC = 25oC, VGS = 10V)  
Continuous (TC = 100oC, VGS = 4.5V)  
Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)  
Pulsed  
75  
75  
A
A
A
A
ID  
28  
Figure 4  
Power dissipation  
Derate above 25oC  
345  
2.3  
W
PD  
W/oC  
TJ, TSTG  
Operating and Storage Temperature  
-55 to 175  
oC  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance Junction to Case TO-263  
0.43  
62  
oC/W  
oC/W  
oC/W  
Thermal Resistance Junction to Ambient TO-263  
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area  
43  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
800 units  
N302AS  
ISL9N302AS3ST  
TO-263AB  
330mm  
24mm  
©2002 Fairchild Semiconductor Corporation  
Rev. B1,April 2002  

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