Datasheet > N303AP

N303AP

更新时间： 2024-11-04 22:29:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	265K
描述
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз

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N303AP 数据手册

September 2002

PWM Optimized

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3

N-Channel Logic Level UltraFET® Trench MOSFETs

30V, 75A, 3.2mΩ

General Description

Features

This device employs a new advanced trench MOSFET

technology and features low gate charge while maintaining

low on-resistance.

•

Fast switching

= 0.0026Ω (Typ), V = 10V

DS(ON)

= 0.004Ω (Typ), V = 4.5V

Optimized for switching applications, this device improves

the overall efficiency of DC/DC converters and allows

operation to higher switching frequencies.

Q (Typ) = 61nC, V = 5V

(Typ) = 17nC

Applications

•

DC/DC converters

(Typ) = 7000pF

ISS

SOURCE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

SOURCE

DRAIN

(FLANGE)

TO-220AB

TO-262AB

TO-263AB

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

Continuous (T = 25 C, V = 10V)

Continuous (T = 100 C, V = 4.5V)

C GS

Continuous (T = 25 C, V = 10V, R = 43 C/W)

θJA

Pulsed

Figure 4

Power dissipation

Derate above

215

1.43

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-262, TO-263

Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263

0.7

C/W

θJC

θJA

Thermal Resistance Junction to Ambient TO-263, 1in copper pad area

Package Marking and Ordering Information

Device Marking

N303AS

Device

Package

TO-263AB

TO-220AB

TO-262AA

Reel Size

330mm

Tube

Tape Width

Quantity

800 units

50 units

ISL9N303AS3ST

ISL9N303AP3

ISL9N303AS3

24mm

N/A

N303AP

N303AS

Tube

N/A

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1

12 3 4 5 6 7...11

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