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N3029ZC240 PDF预览

N3029ZC240

更新时间: 2024-11-18 20:49:31
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
11页 409K
描述
Silicon Controlled Rectifier, 5967A I(T)RMS, 2400V V(DRM), 2400V V(RRM), 1 Element

N3029ZC240 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-XXDB-X3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84配置:SINGLE
最大直流栅极触发电流:300 mAJESD-30 代码:O-XXDB-X3
元件数量:1端子数量:3
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:5967 A断态重复峰值电压:2400 V
重复峰值反向电压:2400 V表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

N3029ZC240 数据手册

 浏览型号N3029ZC240的Datasheet PDF文件第2页浏览型号N3029ZC240的Datasheet PDF文件第3页浏览型号N3029ZC240的Datasheet PDF文件第4页浏览型号N3029ZC240的Datasheet PDF文件第5页浏览型号N3029ZC240的Datasheet PDF文件第6页浏览型号N3029ZC240的Datasheet PDF文件第7页 
Date:- 13 Jun, 2007  
Data Sheet Issue:- 1  
WESTCODE  
An IXYS Company  
Provisional Data  
Phase Control Thyristor  
Types N3029Z#240 to N3029Z#280  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
2400-2800  
2400-2800  
2400-2800  
2500-2900  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
3029  
2087  
1270  
5967  
5201  
38.2  
A
A
A
IT(RMS)M Nominal RMS on-state current, Tsink=25°C, (note 2)  
A
IT(d.c.)  
ITSM  
ITSM2  
I2t  
D.C. on-state current, Tsink=25°C, (note 4)  
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)  
kA  
kA  
A2s  
A2s  
42.0  
7.30×106  
8.82×106  
75  
I2t  
(continuous, 50Hz)  
(repetitive, 50Hz, 60s)  
(non-repetitive)  
(di/dt)cr Critical rate of rise of on-state current (note 6)  
150  
A/µs  
300  
VRGM  
PG(AV)  
PGM  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Operating temperature range  
Storage temperature range  
5
V
5
W
W
°C  
°C  
30  
Tj op  
-40 to +125  
-40 to +150  
Tstg  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=2000A, IFG=2A, tr0.5µs, Tcase=125°C.  
Provisional Data Sheet. Types N3029Z#240 to N3029Z#280 Issue 1  
Page 1 of 11  
June, 2007  

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