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N302AP

更新时间: 2024-11-17 22:29:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 125K
描述
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

N302AP 数据手册

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January 2002  
ISL9N302AP3  
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs  
General Description  
Features  
This device employs a new advanced trench MOSFET  
technology and features low gate charge while maintaining  
low on-resistance.  
• Fast switching  
• r  
• r  
= 0.0019(Typ), V = 10V  
GS  
DS(ON)  
DS(ON)  
= 0.0027(Typ), V = 4.5V  
Optimized for switching applications, this device improves  
the overall efficiency of DC/DC converters and allows  
operation to higher switching frequencies.  
GS  
• Q (Typ) = 110nC, V = 5V  
g
GS  
• Q (Typ) = 31nC  
gd  
Applications  
• DC/DC converters  
• C  
(Typ) = 11000pF  
ISS  
SOURCE  
DRAIN  
GATE  
D
S
G
DRAIN  
(FLANGE)  
TO-220AB  
MOSFET Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Ratings  
30  
Units  
V
V
V
V
Drain to Source Voltage  
Gate to Source Voltage  
DSS  
GS  
20  
Drain Current  
o
75  
75  
A
A
Continuous (T = 25 C, V = 10V)  
C
GS  
I
D
o
Continuous (T = 100 C, V = 4.5V)  
C
GS  
Pulsed  
Figure 4  
A
Power dissipation  
Derate above 25 C  
345  
2.3  
W
W/ C  
P
o
o
D
o
T , T  
Operating and Storage Temperature  
-55 to 175  
C
J
STG  
Thermal Characteristics  
o
o
R
Thermal Resistance Junction to Case TO-220  
0.43  
62  
C/W  
C/W  
θJC  
θJA  
R
Thermal Resistance Junction to Ambient TO-220  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
N302AP  
ISL9N302AP3  
TO-220AB  
Tube  
N/A  
50  
©2002 Fairchild Semiconductor Corporation  
Rev. B January 2002  

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