5秒后页面跳转
N3022MK140 PDF预览

N3022MK140

更新时间: 2023-12-06 20:13:26
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
13页 782K
描述
Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。 器件电压范围在400V至6500V,适合用于线电压230V至1000V以上的应用(电压更高的应用现可使用我们的中压晶闸管系列)。

N3022MK140 数据手册

 浏览型号N3022MK140的Datasheet PDF文件第1页浏览型号N3022MK140的Datasheet PDF文件第2页浏览型号N3022MK140的Datasheet PDF文件第4页浏览型号N3022MK140的Datasheet PDF文件第5页浏览型号N3022MK140的Datasheet PDF文件第6页浏览型号N3022MK140的Datasheet PDF文件第7页 
Wespack Phase Control Thyristor Types N3022MK120 to N3022MK140  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
VDRM VDSM VRRM  
VRSM  
V
1300  
1500  
VD VR  
DC V  
810  
Voltage Grade  
V
1200  
1400  
12  
14  
930  
2.0 Extension of Voltage Grades  
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.  
3.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.  
4.0 Repetitive dv/dt  
Standard dv/dt is 1000V/µs.  
5.0 Snubber Components  
When selecting snubber components, care must be taken not to use excessively large values of snubber  
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to  
device damage due to the large resultant values of snubber discharge current. If required, please consult  
the factory for assistance.  
6.0 Rate of rise of on-state current  
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during  
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not  
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the  
total device current including that from any local snubber network.  
7.0 Gate Drive  
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least  
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.  
IGM  
4A/µs  
IG  
tp1  
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration  
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.  
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The  
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a  
magnitude in the order of 1.5 times IGT.  
Data Sheet. Types N3022MK120 to N3022MK140 Issue 3  
Page 3 of 11  
October, 2014  

与N3022MK140相关器件

型号 品牌 描述 获取价格 数据表
N3022ZC140 IXYS Silicon Controlled Rectifier, 5964A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element

获取价格

N3022ZC160 IXYS Silicon Controlled Rectifier, 5964A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element

获取价格

N3022ZC160-220 IXYS Silicon Controlled Rectifier, 5900A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element

获取价格

N3022ZC180 IXYS Silicon Controlled Rectifier, 5964A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element

获取价格

N3022ZC200 IXYS Silicon Controlled Rectifier, 5964A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element

获取价格

N3022ZC220 IXYS Silicon Controlled Rectifier, 5964A I(T)RMS, 2200V V(DRM), 2200V V(RRM), 1 Element

获取价格