是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8504.50.80.00 | 风险等级: | 5.83 |
型芯材料: | FERRITE | 直流电阻: | 0.34 Ω |
标称电感 (L): | 68 µH | 电感器应用: | DC-DC CONVERTER |
电感器类型: | GENERAL PURPOSE INDUCTOR | 功能数量: | 1 |
端子数量: | 2 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 最大额定电流: | 1 A |
自谐振频率: | 8.3 MHz | 形状/尺寸说明: | RECTANGULAR PACKAGE |
屏蔽: | NO | 表面贴装: | YES |
端子位置: | DUAL ENDED | 端子形状: | WRAPAROUND |
测试频率: | 0.001 MHz | 容差: | 10% |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N08DPB681K | TAIYO YUDEN |
获取价格 |
SMD INDUCTORS | |
N08DPB681M | TAIYO YUDEN |
获取价格 |
General Purpose Inductor, 680uH, 20%, 1 Element, SMD | |
N08DPB6R8M | TAIYO YUDEN |
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SMD INDUCTORS | |
N08DPB820K | TAIYO YUDEN |
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General Purpose Inductor, 82uH, 10%, 1 Element, Ferrite-Core, SMD, CHIP, ROHS COMPLIANT | |
N08DPB821K | TAIYO YUDEN |
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SMD INDUCTORS | |
N08L083WC2C | NANOAMP |
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8Mb Ultra-Low Power Asynchronous CMOS SRAM 10 | |
N08L083WC2CT1 | NANOAMP |
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8Mb Ultra-Low Power Asynchronous CMOS SRAM 10 | |
N08L083WC2CT1-55IL | NANOAMP |
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8Mb Ultra-Low Power Asynchronous CMOS SRAM 10 | |
N08L1618C2A | NANOAMP |
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8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 | |
N08L1618C2AB | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 |