Datasheet > N08L163WC2A

N08L163WC2A

更新时间： 2024-01-04 02:38:14

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
10页	252K
描述
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit

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N08L163WC2A 数据手册

NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N08L163WC2A

8Mb Ultra-Low Power Asynchronous CMOS SRAM

512K × 16 bit

Overview

Features

The N08L163WC2A is an integrated memory

device containing a 8 Mbit Static Random Access

Memory organized as 524,288 words by 16 bits.

The device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with two chip enable

(CE1 and CE2) controls and output enable (OE) to

allow for easy memory expansion. Byte controls

(UB and LB) allow the upper and lower bytes to be

accessed independently and can also be used to

deselect the device. The N08L163WC2A is optimal

for various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

4.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs(Typical)

• Very low Page Mode operating current

1.0mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.8V

temperature range of -40 C to +85 C and is

available in JEDEC standard packages compatible

with other standard 512Kb x 16 SRAMs

• Very fast output enable access time

25ns OE access time

• Very fast Page Mode access time

= 25ns

AAP

• Automatic power down to standby mode

• TTL compatible three-state output driver

Product Family

Standby

Power

Supply

(Vcc)

Operating

Current (Icc),

Typical

Operating

Current (I_SB),

Part Number

Package Type

Speed

Temperature

Typical

N08L163WC2AB

48 - BGA

70ns@2.7V

85ns @ 2.3V

-40^oC to +85^oC

2.3V - 3.6V

4 µA

2 mA @ 1MHz

N08L163WC2AB2 48 - BGA Green

Pin Configuration

Pin Descriptions

A₀

A₃

A₁

A₄

A₂

Pin Name

A₀-A₁₈

CE1, CE2

I/O₀-I/O₁₅

Pin Function

CE2

Address Inputs

Write Enable Input

Chip Enable Input

I/O₈

I/O₀

CE1

I/O₉I/O₁₀A₅

V_SSI/O₁₁A₁₇

A₆

A₇

I/O₁I/O₂

I/O₃V_CC

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

V_CCI/O₁₂

I/O₁₄I/O₁₃A₁₄

A₁₆I/O₄V_SS

A₁₅I/O₅I/O₆

I/O₁₅

A₁₈

A₁₂

A₉

A₁₃

A₁₀

I/O₇

A₈

A₁₁

V_CC

V_SS

Power

Ground

Not Connected

48 Pin BGA (top)

8 x 10 mm

(DOC# 14-02-020 REV F ECN# 01-1281)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...10

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与N08L163WC2A相关器件

型号	品牌	获取价格	描述	数据表
N08L163WC2AB2-70I	NANOAMP	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
N08L163WC2AB2-85I	NANOAMP	获取价格	Standard SRAM, 512KX16, 85ns, CMOS, PBGA48
N08L163WC2C	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L163WC2CZ1	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L163WC2CZ1-55IL	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L6182A	ONSEMI	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L6182AB27I	ONSEMI	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L6182AB27IT	ONSEMI	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L6182AB7I	ONSEMI	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L6182AB7IT	ONSEMI	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51

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