是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | TSOP, TSOP44,.46,32 | Reach Compliance Code: | unknown |
风险等级: | 5.8 | Is Samacsys: | N |
最长访问时间: | 55 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-G44 | 内存密度: | 8388608 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
端子数量: | 44 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1MX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP |
封装等效代码: | TSOP44,.46,32 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
电源: | 2.5/3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.000004 A | 最小待机电流: | 1.5 V |
子类别: | SRAMs | 最大压摆率: | 0.015 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N08L1618C2A | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 | |
N08L1618C2AB | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 | |
N08L1618C2AB2 | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 | |
N08L1618C2AB2-70I | AMI |
获取价格 |
Standard SRAM, 512KX16, 70ns, CMOS, PBGA42, GREEN, BGA-42 | |
N08L1618C2AB2-85I | AMI |
获取价格 |
Standard SRAM, 512KX16, 85ns, CMOS, PBGA42, GREEN, BGA-42 | |
N08L1618C2AB-70I | AMI |
获取价格 |
Standard SRAM, 512KX16, 70ns, CMOS, PBGA42, BGA-42 | |
N08L163WC1C | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 | |
N08L163WC1CT1 | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 | |
N08L163WC1CT1-55IL | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 | |
N08L163WC2A | NANOAMP |
获取价格 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 51 |