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N08L083WC2CT1-55IL PDF预览

N08L083WC2CT1-55IL

更新时间: 2024-01-12 23:19:57
品牌 Logo 应用领域
NANOAMP 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
9页 217K
描述
8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 8 bit

N08L083WC2CT1-55IL 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:TSOP, TSOP44,.46,32Reach Compliance Code:unknown
风险等级:5.8Is Samacsys:N
最长访问时间:55 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP44,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:2.5/3.3 V认证状态:Not Qualified
最大待机电流:0.000004 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.015 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
Base Number Matches:1

N08L083WC2CT1-55IL 数据手册

 浏览型号N08L083WC2CT1-55IL的Datasheet PDF文件第2页浏览型号N08L083WC2CT1-55IL的Datasheet PDF文件第3页浏览型号N08L083WC2CT1-55IL的Datasheet PDF文件第4页浏览型号N08L083WC2CT1-55IL的Datasheet PDF文件第5页浏览型号N08L083WC2CT1-55IL的Datasheet PDF文件第6页浏览型号N08L083WC2CT1-55IL的Datasheet PDF文件第7页 
NanoAmp Solutions, Inc.  
N08L083WC2C  
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035  
ph: 408-935-7777, FAX: 408-935-7770  
www.nanoamp.com  
Advance Information  
8Mb Ultra-Low Power Asynchronous CMOS SRAM  
1024K × 8 bit  
Overview  
Features  
The N08L083WC2C is an integrated memory  
device containing a 8 Mbit Static Random Access  
Memory organized as 1,048,576 words by 8 bits.  
The device is designed and fabricated using  
NanoAmp’s advanced CMOS technology to  
provide both high-speed performance and ultra-low  
power. The device operates with two chip enable  
(CE1 and CE2) controls and output enable (OE) to  
allow for easy memory expansion. The  
• Single Wide Power Supply Range  
2.2 to 3.6 Volts  
• Very low standby current  
2.0µA at 3.0V (Typical)  
• Very low operating current  
1.5mA at 3.0V and 1µs(Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
N08L083WC2C is optimal for various applications  
where low-power is critical such as battery backup  
and hand-held devices. The device can operate  
• Low voltage data retention  
o
over a very wide temperature range of -40 C to  
Vcc = 1.5V  
o
+85 C and is available in JEDEC standard  
• Very fast output enable access time  
packages compatible with other standard 512Kb x  
16 SRAMs  
25ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Ultra Low Power Sort Available  
Product Family  
Standby  
Current  
(ISB),  
Operating  
Power  
Operating Current  
(Icc), Typical  
Part Number  
Package Type  
Speed  
Temperature  
Supply (Vcc)  
Typical  
-40oC to +85oC  
N08L083WC2CT1 44 TSOP II Pb Free  
2.2V - 3.6V  
55ns  
2 µA  
1.5 mA @ 1MHz  
Pin Configuration  
Pin Descriptions  
Pin Name  
A0-A19  
WE  
CE1, CE2  
OE  
Pin Function  
A4  
1
PIN  
A5  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
Address Inputs  
Write Enable Input  
Chip Enable Input  
Output Enable Input  
Data Inputs/Outputs  
Power  
Ground  
Not Connected  
A3  
2
ONE  
A6  
A2  
3
A7  
A1  
4
OE  
A0  
5
CE2  
A8  
CE  
6
DNU  
DNU  
I/O0  
I/O1  
VCC  
VSS  
I/O2  
I/O3  
DNU  
DNU  
WE  
A19  
A18  
A17  
A16  
A15  
7
DNU  
DNU  
I/O7  
I/O6  
VSS  
VCC  
I/O5  
I/O4  
DNU  
DNU  
A9  
8
9
I/O0-I/O7  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
VCC  
VSS  
NC  
A10  
A11  
A12  
A13  
A14  
Stock No. 23379-A  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
1

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