Datasheet > N08L163WC1CT1

N08L163WC1CT1

更新时间： 2024-09-27 03:00:19

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
9页	224K
描述
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N08L163WC1CT1 数据手册

NanoAmp Solutions, Inc.

N08L163WC1C

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

Advance Information

8Mb Ultra-Low Power Asynchronous CMOS SRAM

512K × 16 bit

Overview

Features

The N08L163WC1C is an integrated memory

device containing a 8 Mbit Static Random Access

Memory organized as 524,288 words by 16 bits.

The device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. Byte controls (UB and LB) allow the upper

and lower bytes to be accessed independently and

can also be used to deselect the device. The

N08L163WC1C is optimal for various applications

where low-power is critical such as battery backup

and hand-held devices. The device can operate

• Single Wide Power Supply Range

2.2 to 3.6 Volts

• Very low standby current

2.0µA at 3.0V (Typical)

• Very low operating current

1.5mA at 3.0V and 1µs(Typical)

• Simple memory control

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.5V

over a very wide temperature range of -40 C to

• Very fast output enable access time

+85 C and is available in JEDEC standard

25ns OE access time

packages compatible with other standard 512Kb x

16 SRAMs

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Ultra Low Power Sort Avaliable

Product Family

Standby

Current

Operating

Power

Operating Current

(Icc), Typical

Part Number

Package Type

Speed

(I_SB),

Typical

Temperature Supply (Vcc)

-40^oC to +85^oC

N08L163WC1CT1 44-TSOP II Pb-Free

2.2V - 3.6V

55ns

2 µA

1.5 mA @ 1MHz

Pin Configuration

Pin Descriptions

Pin Name

A₀-A₁₈

Pin Function

ONE

Address Inputs

Write Enable Input

Chip Enable Input

I/O0

I/O1

I/O2

I/O3

VCC

VSS

I/O4

I/O5

I/O6

I/O7

A18

A17

A16

A15

A14

I/O15

I/O14

I/O13

I/O12

VSS

VCC

I/O11

I/O10

I/O9

I/O8

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

I/O₀-I/O₁₅

V_CC

V_SS

Power

Ground

Not Connected

A10

A11

A12

A₁₃

Stock No. 23394-B 01/05

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...9

中文翻译

下载PDF

与N08L163WC1CT1相关器件

型号	品牌	获取价格	描述	数据表
N08L163WC1CT1-55IL	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L163WC2A	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L163WC2AB2-70I	NANOAMP	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
N08L163WC2AB2-85I	NANOAMP	获取价格	Standard SRAM, 512KX16, 85ns, CMOS, PBGA48
N08L163WC2C	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L163WC2CZ1	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L163WC2CZ1-55IL	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L6182A	ONSEMI	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L6182AB27I	ONSEMI	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51
N08L6182AB27IT	ONSEMI	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 51

与N08L163WC1CT1相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

20
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

16
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

29

产品中心

服务支持

精选活动

关于我们

帮助中心

N08L163WC1CT1

N08L163WC1CT1 数据手册

与N08L163WC1CT1相关器件

与N08L163WC1CT1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N08L163WC1CT1

N08L163WC1CT1 数据手册

与N08L163WC1CT1相关器件

与N08L163WC1CT1相关文章

您还可以找

您在本页遇到什么问题？