Datasheet > MX26F640J3XCC-10

MX26F640J3XCC-10

更新时间： 2024-11-22 03:45:07

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
47页	431K
描述
64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY

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MX26F640J3XCC-10 数据手册

ADVANCED INFORMATION

MX26F640J3

Macronix NBit^TMMemory Family

64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash^TMMEMORY

FEATURES

• 3.0V to 3.6V operation voltage

• Block Structure

Software Feature

• Support Common Flash Interface (CFI)

- eLiteFlash^TMmemory device parameters stored on

the device and provide the host system to access.

- 64 x 128Kbyte Erase Blocks

• Fast random / page mode access time

- 100/25 ns Read Access Time

• Page Depth: 8-word

Hardware Feature

• 128-bit Protection Register

- 64-bit Unique Device Identifier

- 64-bit User Programmable OTP Cells

• 32-Byte Write Buffer

• A0 pin

- Select low byte address when device is in byte mode.

Not used in word mode.

• STS pin

- 6 us/byte Effective Programming Time

• Enhanced Data Protection Features Absolute Protec-

tion with VPEN = GND

- Indicates the status of the internal state machine.

• VPEN pin

- For Erase /Program/ Block Lock enable.

• VCCQ Pin

- Flexible Block Locking

- Block Erase/Program Lockout during Power Transi-

tions

-The output buffer power supply, control the device 's

output voltage.

Performance

Packaging

• Low power dissipation

- 56-LeadTSOP

- 64-ball CSP

- typical 15mA active current for page mode read

- 80uA/(max.) standby current

• High Performance

Technology

- 0.25u Macronix NBit^TMFlashTechnology

- Block erase time: 2s typ.

- Byte programming time: 210us typ.

- Block programming time: 0.8s typ. (using Write to

Buffer Command)

• Program/Erase Endurance cycles: 100 cycles

P/N:PM1114

REV. 0.00, JUN. 30, 2004

12 3 4 5 6 7...47

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