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MX26L3220MC-12 PDF预览

MX26L3220MC-12

更新时间: 2024-11-21 22:51:03
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
38页 1135K
描述
32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

MX26L3220MC-12 数据手册

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ADVANCED INFORMATION  
MX26L3220  
32M-BIT[2Mx16]CMOS  
MULTIPLE-TIME-PROGRAMMABLEEPROM  
FEATURES  
2,097,152 x 16 byte structure  
Single Power Supply Operation  
- 2.7 to 3.6 volt for read, erase, and program  
operations  
Status Reply  
- Data polling & Toggle bits provide detection of  
programanderaseoperationcompletion  
12V ACC input pin provides accelerated program  
capability  
Low Vcc write inhibit is equal to or less than 2.5V  
Compatible with JEDEC standard  
HighPerformance  
- Fast access time: 90/120ns (typ.)  
- Fast program time: 70s/chip (typ.)  
- Fast erase time: 90s/chip (typ.)  
LowPowerConsumption  
Output voltages and input voltages on the device is  
deterined by the voltage on the VI/O pin.  
- VI/O voltage range:1.65V~3.6V  
10 years data retention  
Package  
- 44-Pin SOP  
- Low active read current: 17mA (typ.) at 5MHz  
- Low standby current: 30uA (typ.)  
Minimum 100 erase/program cycle  
- 48-Pin TSOP  
- 48-Ball CSP  
GENERAL DESCRIPTION  
The MX26L3220 is a 32M bit MTP EPROMTM organized  
as 2M bytes of 16 bits. MXIC's MTP EPROMTM offer the  
most cost-effective and reliable read/write non-volatile  
randomaccessmemory.TheMX26L3220ispackagedin  
44-pinSOP,48-pinTSOPand48-ballCSP.Itisdesigned  
tobereprogrammedanderasedinsystemorinstandard  
EPROMprogrammers.  
MXIC's MTP EPROMTM technology reliably stores  
memory contents even after 100 erase and program  
cycles. The MXIC cell is designed to optimize the erase  
andprogrammechanisms.Inaddition,thecombinationof  
advanced tunnel oxide processing and low internal  
electric fields for erase and programming operations  
produces reliable cycling.  
The standard MX26L3220 offers access time as fast as  
90ns,allowingoperationofhigh-speedmicroprocessors  
without wait states. To eliminate bus contention, the  
MX26L3220 has separate chip enable (CE) and output  
enable OE controls. MXIC's MTP EPROMTM augment  
EPROMfunctionalitywithin-circuitelectricalerasureand  
programming.TheMX26L3220usesacommandregister  
to manage this functionality.  
The MX26L3220 uses a 2.7V to 3.6V VCC supply to  
perform the High Reliability Erase and auto Program/  
Erasealgorithms.  
Thehighestdegreeoflatch-upprotectionisachievedwith  
MXIC'sproprietarynon-epiprocess.Latch-upprotection  
isprovedforstressesupto100milliampsonaddressand  
data pin from -1V to VCC +1V.  
P/N:PM0826  
REV. 0.5, JAN. 29, 2002  
1

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