Datasheet > 存储 > 闪存> MX26L1620XBI-12

MX26L1620XBI-12

更新时间： 2024-11-21 22:12:15

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
36页	684K
描述
16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX26L1620XBI-12 数据手册

ADVANCED INFORMATION

MX26L1620

16M-BIT[1Mx16]CMOS

MULTIPLE-TIME-PROGRAMMABLEEPROM

FEATURES

• 1,048,576 x 16 byte structure

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program

operations

• 10-yeardataretention

• Status Reply

- Data polling & Toggle bits provide detection of

programanderaseoperationcompletion

• 12V ACC input pin provides accelerated program

capability

• Low Vcc write inhibit is equal to or less than 2.5V

• Compatible with JEDEC standard

• HighPerformance

- Fast access time: 90/120ns (typ.)

- Fast program time: 35s/chip (typ.)

- Fast erase time: 45s/chip (typ.)

• LowPowerConsumption

• Output voltages and input voltages on the device is

determined by the voltage on the VI/O pin.

- VI/O voltage range:1.65V~3.6V

• Package

- 44-Pin SOP

- Low active read current: 10mA (typ.) at 5MHz

- Low standby current: 30uA (typ.)

• Minimum 100 erase/program cycle

- 48-Pin TSOP

- 48-Ball CSP

GENERAL DESCRIPTION

The MX26L1620 is a 16M bit MTP EPROM^TMorganized

as 1M bytes of 16 bits. MXIC's MTP EPROM^TMoffer the

most cost-effective and reliable read/write non-volatile

randomaccessmemory.TheMX26L1620ispackagedin

44-pinSOP,48-pinTSOPand48-ballCSP.Itisdesigned

tobereprogrammedanderasedinsystemorinstandard

EPROMprogrammers.

MXIC's MTP EPROM^TMtechnology reliably stores

memory contents even after 100 erase and program

cycles. The MXIC cell is designed to optimize the erase

andprogrammechanisms.Inaddition,thecombinationof

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling.

The standard MX26L1620 offers access time as fast as

90ns,allowingoperationofhigh-speedmicroprocessors

without wait states. To eliminate bus contention, the

MX26L1620 has separate chip enable (CE) and output

enable OE controls. MXIC's MTP EPROM^TMaugment

EPROMfunctionalitywithin-circuitelectricalerasureand

programming.TheMX26L1620usesacommandregister

to manage this functionality.

The MX26L1620 uses a 2.7V to 3.6V VCC supply to

perform the High Reliability Erase and auto Program/

Erasealgorithms.

Thehighestdegreeoflatch-upprotectionisachievedwith

MXIC'sproprietarynon-epiprocess.Latch-upprotection

isprovedforstressesupto100milliampsonaddressand

data pin from -1V to VCC +1V.

P/N:PM0827

REV. 0.4, JAN. 31, 2002

12 3 4 5 6 7...36

中文翻译

下载PDF

与MX26L1620XBI-12相关器件

型号	品牌	获取价格	描述	数据表
MX26L1620XBI-90	Macronix	获取价格	16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220MC-12	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220MC-90	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220MI-12	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220MI-90	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220TC-12	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220TC-90	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220TI-12	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
MX26L3220TI-90	Macronix	获取价格	32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM

与MX26L1620XBI-12相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

34
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

MX26L1620XBI-12

MX26L1620XBI-12 数据手册

与MX26L1620XBI-12相关器件

与MX26L1620XBI-12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX26L1620XBI-12

MX26L1620XBI-12 数据手册

与MX26L1620XBI-12相关器件

与MX26L1620XBI-12相关文章

您还可以找

您在本页遇到什么问题？