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MX26F640J3 PDF预览

MX26F640J3

更新时间: 2024-11-22 04:38:35
品牌 Logo 应用领域
旺宏电子 - Macronix /
页数 文件大小 规格书
47页 431K
描述
64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY

MX26F640J3 数据手册

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ADVANCED INFORMATION  
MX26F640J3  
R
Macronix NBitTM Memory Family  
64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY  
FEATURES  
• 3.0V to 3.6V operation voltage  
• Block Structure  
Software Feature  
• Support Common Flash Interface (CFI)  
- eLiteFlashTM memory device parameters stored on  
the device and provide the host system to access.  
- 64 x 128Kbyte Erase Blocks  
• Fast random / page mode access time  
- 100/25 ns Read Access Time  
• Page Depth: 8-word  
Hardware Feature  
• 128-bit Protection Register  
- 64-bit Unique Device Identifier  
- 64-bit User Programmable OTP Cells  
• 32-Byte Write Buffer  
• A0 pin  
- Select low byte address when device is in byte mode.  
Not used in word mode.  
• STS pin  
- 6 us/byte Effective Programming Time  
• Enhanced Data Protection Features Absolute Protec-  
tion with VPEN = GND  
- Indicates the status of the internal state machine.  
• VPEN pin  
- For Erase /Program/ Block Lock enable.  
• VCCQ Pin  
- Flexible Block Locking  
- Block Erase/Program Lockout during Power Transi-  
tions  
-The output buffer power supply, control the device 's  
output voltage.  
Performance  
Packaging  
• Low power dissipation  
- 56-LeadTSOP  
- 64-ball CSP  
- typical 15mA active current for page mode read  
- 80uA/(max.) standby current  
• High Performance  
Technology  
- 0.25u Macronix NBitTM FlashTechnology  
- Block erase time: 2s typ.  
- Byte programming time: 210us typ.  
- Block programming time: 0.8s typ. (using Write to  
Buffer Command)  
• Program/Erase Endurance cycles: 100 cycles  
P/N:PM1114  
REV. 0.00, JUN. 30, 2004  
1

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