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MWT-A989SB PDF预览

MWT-A989SB

更新时间： 2024-11-21 20:05:51
品牌 Logo 应用领域
IXYS 光电二极管晶体管
页数 文件大小 规格书
10页 218K
描述
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 4 PIN

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MWT-A989SB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT, 4 PIN
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.7
配置：SINGLE最小漏源击穿电压：8 V
最大漏极电流 (ID)：0.2 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：S BANDJESD-30 代码：R-PDSO-F4
JESD-609代码：e3湿度敏感等级：3
元件数量：1端子数量：4
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

MWT-A989SB 数据手册

 浏览型号MWT-A989SB的Datasheet PDF文件第2页浏览型号MWT-A989SB的Datasheet PDF文件第3页浏览型号MWT-A989SB的Datasheet PDF文件第4页浏览型号MWT-A989SB的Datasheet PDF文件第5页浏览型号MWT-A989SB的Datasheet PDF文件第6页浏览型号MWT-A989SB的Datasheet PDF文件第7页 
MwT-A989SB  
0.5-4 GHz Packaged FET  
June 2006  
Features:  
•
•
•
Designed for single voltage operations  
Ideal for 0.5 – 4.0 GHz High Linearity / High Dynamic Range Applications  
Excellent RF Performance:  
o
o
o
o
o
40 dBm IP3  
65 dBc ACPR  
25 dBm P1dB  
17 dB SSG @ 2000MHz  
0.9 dB NF @ 2000MHz  
•
•
MTTF>100 years @ ambient temperature 85 °C  
Lead Free RoHS Compliant Surface-Mount SOT-89 Package  
Description:  
Designed specifically for single voltage operations (i.e. no negative voltage is required), the MwT-A989SB is a high linearity GaAs  
MESFET device in low cost SOT89 package that is ideally suited for high dynamic range LNA applications. The applications include  
2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, cdma2000, WCDMA, TD-SCDMA, and UMTS  
base stations. This product is also ideal for high data rate wireless LAN infrastructure applications, such as high QAM rate 802.11  
WiFi and 802.16 WiMax base stations and APs (Access Points). In additional, the product can be used for point-to-point microwave  
communications links. The third order intercept performance of the MwT-A989SB is excellent, typically 14 dB above the 1 dB power  
gain compression point. The NF is as low as 0.6 dB at 900 MHz. The chip is produced using MwT's proprietary high linearity device  
design and process with reliable metal system. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for  
increased durability.  
Electrical Specifications(1): Vdd=6.0V, Ids=100mA, Ta=25 °C  
SYMBOL  
PARA. & CONDITIONS  
FREQ  
UNIT  
TYP  
SSG  
Small Signal Gain  
2GHz  
dB  
17  
P1dB  
Output Power @ 1 dB Compression  
Power Added Efficiency  
Third Order Intercept Point  
Noise Figure (2)  
2GHz  
2GHz  
2GHz  
2GHz  
dBm  
%
25  
40  
40  
0.9  
PAE  
IP3  
dBm  
dB  
Noise Figure  
(1) with tuners at input and output  
(2) Vds=4.0 V @ Ids=50mA  
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538  
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com  
Data contained herein is subject to change without notice. All rights reserved © 2006  
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.  
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