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MWT-H15 PDF预览

MWT-H15

更新时间： 2024-11-25 14:54:03
品牌 Logo 应用领域
IXYS 放大器晶体管
页数 文件大小 规格书
2页 134K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET,

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MWT-H15 技术参数

生命周期：Active包装说明：UNCASED CHIP, R-XUUC-N
Reach Compliance Code：compliant风险等级：5.78
配置：SINGLEFET 技术：HIGH ELECTRON MOBILITY
最大反馈电容 (Crss)：0.06 pF最高频带：KA BAND
JESD-30 代码：R-XUUC-N元件数量：1
工作模式：DEPLETION MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：UNCASED CHIP
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：11 dB
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

MWT-H15 数据手册

 浏览型号MWT-H15的Datasheet PDF文件第2页 
MwT-H15  
28 GHz High Power  
AlGaAs/InGaAs PHEMT  
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM  
50  
50  
FEATURES  
75  
72  
241  
• 27 dBm POWER OUTPUT AT 12 GHz  
• 11 dB GAIN AT 12 GHz  
• 0.3 MICRON REFRACTORY METAL/GOLD GATE  
• 630 MICRON GATE WIDTH  
52 35  
50 35  
52  
775  
35  
50 35 52  
CHIP THICKNESS = 125 MICRONS  
All Dimensions in Microns  
DESCRIPTION  
The MwT-H15 is an AlGaAs/InGaAs heterojunction PHEMT (Pseudomorphic-High-Electron-Mobility Transistor) device whose nominal  
0.3 micron gate length and 630 micron gate width make it ideally suited to applications requiring high-gain and power in the 500 MHz to  
28 GHz frequency range with power outputs ranging from 400-800 milli-watts. The device is equally effective for either wideband (e.g. 6-  
18 GHz) or narrow-band applications. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process for increased  
durability. Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss ranges, insuring consistent circuit  
operation.  
DC SPECIFICATIONS AT Ta = 25°C  
RF SPECIFICATIONS AT Ta = 25°C  
SYMBOL  
PARAM. & CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
SYMBOL  
PARAMETERS AND CONDITIONS  
FREQ  
12 GHz  
18 GHz  
UNITS  
dBm  
MIN TYP  
27.0  
25.0  
Output Power at 1 dB Compression  
VDS= 6.0 V Idss= 0.6 IDS=110mA  
Saturated Drain Current  
Vds= 4.0 V VGS= 0.0 V  
Transconductance  
P1dB  
IDSS  
mA  
120  
230  
dBm  
26.0  
Small Signal Gain  
VDS= 6.0 V Idss= 0.6 IDS=110mA  
11.0  
10.0  
12 GHz  
18 GHz  
dB  
dB  
Gm  
mS  
V
130  
180  
SSG  
PAE  
Vds= 2.0 V VGS= 0.0 V  
9.5  
Pinch-off Voltage  
Power Added Efficiency  
VDS= 6.0 V Idss= 0.6 IDS=110mA  
-1.2  
-10.0  
Vp  
-2.0  
12 GHz  
%
50  
Vds= 3.0 V IDS= 4.0 mA  
Gate-to-Source Breakdown Volt.  
Igs= -1 mA, Igd= 0  
BVGSO  
V
-6.0  
-8.0  
Recommended IDSS Range  
for Optimum P1dB  
140-  
210  
Idss  
mA  
Gate-to-Drain Breakdown Volt.  
Igd= -1 mA, Igs= 0  
BVGDO  
Rth  
V
-10.0  
80  
Thermal  
MwT-H15 Chip  
°C/W  
Resistance  
PARAMETER  
DEVICE EQUIVALENT CIRCUIT MODEL  
VALUE  
0.10 Ω  
Source Resistance  
Rs  
Source Inductance  
Ls  
0.03  
150.0  
0.12  
.84  
nH  
Ω
pF  
Ω
pF  
nH  
nH  
pF  
Ω
pF  
Ω
pF  
mS  
psec  
Cgd  
Lg  
Rg  
Rd  
Ld  
Drain-Source Resistance  
Drain-Source Capacitance  
Drain Resistance  
Drain Pad Capacitance  
Drain Inductance  
Gate Bond Wire Inductance  
Gate Pad Capacitance  
Gate Resistance  
Gate-Source Capacitance  
Channel Resistance  
Gate-Drain Capacitance  
Transconductance  
Rds  
Cds  
Rd  
Cpd  
Ld  
Lg  
Cpg  
Rg  
Cgs  
Ri  
Cgd  
gm  
tau  
DRAIN  
Cgs  
Ri  
GATE  
Rds  
gm  
tau  
0.05  
0.10  
0.07  
0.20  
0.10  
1.10  
2.31  
0.06  
200.0  
2.6  
Cds  
Cpd  
Cpg  
Rs  
Ls  
SOURCE  
Transit Time  
ORDERING INFORMATION  
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening  
level required.  
Chip  
MwT-H15  
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208  
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.  
12

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