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MWT-H16 PDF预览

MWT-H16

更新时间： 2024-11-21 21:15:31
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 121K
描述
Transistor

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中文翻译

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MWT-H16 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：compliant风险等级：5.61
Base Number Matches：1

MWT-H16 数据手册

 浏览型号MWT-H16的Datasheet PDF文件第2页 
MwT-H16  
28 GHz High Power  
AlGaAs/InGaAs PHEMT  
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM  
50  
50  
FEATURES  
75  
241  
72  
• 28 dBm POWER OUTPUT AT 12 GHz  
• 11 dB GAIN AT 12 GHz  
52  
50 35 52 35  
35 52 35 52 35 52 35 50  
1067  
• 0.3 MICRON REFRACTORY METAL/GOLD GATE  
• 900 MICRON GATE WIDTH  
CHIP THICKNESS = 125 MICRONS  
All Dimensions in Microns  
DESCRIPTION  
The MwT-H16 is an AlGaAs/InGaAs heterojunction PHEMT (Pseudomorphic-High-Electron-Mobility Transistor) device whose nominal  
0.3 micron gate length and 900 micron gate width make it ideally suited to applications requiring high-gain and power in the 500 MHz to  
28 GHz frequency range with power outputs ranging from 500-700 milli-watts. The device is equally effective for either wideband (e.g. 6-  
18 GHz) or narrow-band applications. The chip is produced using MwT’s reliable metal system and all devices are screened to insure  
reliability. All chips are passivated using MwT’s patented “Diamond-Like Carbon” process for increased durability.  
DC SPECIFICATIONS AT Ta = 25°C  
RF SPECIFICATIONS AT Ta = 25°C  
SYMBOL  
PARAM. & CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
SYMBOL  
PARAMETERS AND CONDITIONS  
FREQ  
UNITS  
MIN TYP  
Output Power at 1 dB Compression  
VDS= 6.0 V Idss= 0.8 IDS=190mA  
Saturated Drain Current  
Vds= 4.0 V VGS= 0.0 V  
Transconductance  
P1dB  
12 GHz  
dBm  
27.0 28.0  
IDSS  
mA  
120  
282  
Small Signal Gain  
VDS= 5.0 V IDS=190mA  
Gm  
mS  
V
135  
220  
SSG  
PAE  
12 GHz  
12 GHz  
dB  
%
10.0 11.0  
Vds= 2.0 V VGS= 0.0 V  
Pinch-off Voltage  
-2.0  
-12.0  
Vp  
-5.0  
Power Added Efficiency  
VDS= 6.0V IDS=190mA  
40  
50  
Vds= 3.0 V IDS= 6.0 mA  
Gate-to-Source Breakdown Volt.  
Igs= -1.5 mA  
BVGSO  
V
-6.0  
-8.0  
Recommended IDSS Range  
for Optimum P1dB  
102-  
210  
Idss  
mA  
Gate-to-Drain Breakdown Volt.  
Igd= -1.5 mA  
BVGDO  
Rth  
V
-12.0  
55  
Output Power at Max Efficiency  
Compression Point = 1.5 dB  
VDS= 6.0 V IDS= 190mA  
PMax  
12 GHz  
dBm  
28.0 29.0  
Thermal  
MwT-H16 Chip  
°C/W  
Resistance  
PARAMETER  
DEVICE EQUIVALENT CIRCUIT MODEL  
VALUE  
0.60 Ω  
Source Resistance  
Rs  
Source Inductance  
Ls  
0.04  
120.0  
0.2  
nH  
Ω
pF  
Ω
pF  
nH  
nH  
pF  
Ω
pF  
Ω
pF  
mS  
psec  
Cgd  
Lg  
Rg  
Rd  
Ld  
Drain-Source Resistance  
Drain-Source Capacitance  
Drain Resistance  
Drain Pad Capacitance  
Drain Inductance  
Gate Bond Wire Inductance  
Gate Pad Capacitance  
Gate Resistance  
Gate-Source Capacitance  
Channel Resistance  
Gate-Drain Capacitance  
Transconductance  
Rds  
Cds  
Rd  
Cpd  
Ld  
Lg  
Cpg  
Rg  
Cgs  
Ri  
Cgd  
gm  
tau  
DRAIN  
Cgs  
Ri  
GATE  
1.0  
Rds  
gm  
tau  
0.20  
0.09  
0.05  
0.50  
0.30  
1.40  
1.0  
0.14  
280.0  
1.9  
Cds  
Cpd  
Cpg  
Rs  
Ls  
SOURCE  
Transit Time  
ORDERING INFORMATION  
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening  
level required.  
Chip  
MwT-H16  
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208  
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.  
12

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