Datasheet > MWS5114D3

MWS5114D3

更新时间： 2024-10-27 22:29:43

品牌	Logo	应用领域
英特矽尔 - INTERSIL		内存集成电路静态存储器输出元件输入元件
页数	文件大小	规格书
7页	32K
描述
1024-Word x 4-Bit LSI Static RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MWS5114D3 数据手册

MWS5114

1024-Word x 4-Bit

LSI Static RAM

March 1997

Features

Description

• Fully Static Operation

The MWS5114 is a 1024 word by 4-bit static random access

memory that uses the ion-implanted silicon gate comple-

mentary MOS (CMOS) technology. It is designed for use in

memory systems where low power and simplicity in use are

desirable. This type has common data input and data output

and utilizes a single power supply of 4.5V to 6.5V.

• Industry Standard 1024 x 4 Pinout (Same as Pinouts

for 6514, 2114, 9114, and 4045 Types)

• Common Data Input and Output

• Memory Retention for Standby Battery Voltage as Low

as 2V Min

The MWS5114 is supplied in 18 lead, hermetic, dual-in-line

sidebrazed ceramic packages (D sufﬁx) and in 18 lead dual-

in-line plastic packages (E sufﬁx).

• All Inputs and Outputs Directly TTL Compatible

• Three-State Outputs

• Low Standby and Operating Power

Ordering Information

200ns

MWS5114E3

250ns

300ns

MWS5114E1

TEMPERATURE RANGE

PACKAGE

PDIP

Burn-In

SBDIP

Burn-In

PKG. NO.

MWS5114E2

0 C to +70 C

E18.3

MWS5114E2X

MWS5114D2

MWS5114D3

MWS5114D3X

MWS5114D1

0 C to +70 C

D18.3

Pinout

MWS5114

(PDIP, SBDIP)

TOP VIEW

18 V

17 A7

16 A8

15 A9

14 I/O1

13 I/O2

12 I/O3

11 I/O4

OPERATIONAL MODES

FUNCTION

DATA PINS

Output: Dependent on data

Input

Read

Write

Not Selected

High Impedance

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 1325.2

12 3 4 5 6 7

中文翻译

下载PDF

与MWS5114D3相关器件

型号	品牌	获取价格	描述	数据表
MWS5114D3X	INTERSIL	获取价格	1024-Word x 4-Bit LSI Static RAM
MWS5114D3X	ROCHESTER	获取价格	Standard SRAM, 1KX4, 200ns, CMOS, CDIP18, DIP-18
MWS5114E1	INTERSIL	获取价格	1024-Word x 4-Bit LSI Static RAM
MWS5114E1	ROCHESTER	获取价格	Standard SRAM, 1KX4, 300ns, CMOS, PDIP18, DIP-18
MWS5114E2	INTERSIL	获取价格	1024-Word x 4-Bit LSI Static RAM
MWS5114E2	ROCHESTER	获取价格	Standard SRAM, 1KX4, 250ns, CMOS, PDIP18, DIP-18
MWS5114E2X	INTERSIL	获取价格	1024-Word x 4-Bit LSI Static RAM
MWS5114E2X	ROCHESTER	获取价格	Standard SRAM, 1KX4, 250ns, CMOS, PDIP18, DIP-18
MWS5114E3	ROCHESTER	获取价格	Standard SRAM, 1KX4, 200ns, CMOS, PDIP18, DIP-18
MWS5114E3	INTERSIL	获取价格	1024-Word x 4-Bit LSI Static RAM