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MWS5114E2 PDF预览

MWS5114E2

更新时间: 2024-11-24 22:29:43
品牌 Logo 应用领域
英特矽尔 - INTERSIL 内存集成电路静态存储器光电二极管输出元件输入元件
页数 文件大小 规格书
7页 32K
描述
1024-Word x 4-Bit LSI Static RAM

MWS5114E2 数据手册

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MWS5114  
1024-Word x 4-Bit  
LSI Static RAM  
March 1997  
Features  
Description  
• Fully Static Operation  
The MWS5114 is a 1024 word by 4-bit static random access  
memory that uses the ion-implanted silicon gate comple-  
mentary MOS (CMOS) technology. It is designed for use in  
memory systems where low power and simplicity in use are  
desirable. This type has common data input and data output  
and utilizes a single power supply of 4.5V to 6.5V.  
• Industry Standard 1024 x 4 Pinout (Same as Pinouts  
for 6514, 2114, 9114, and 4045 Types)  
• Common Data Input and Output  
• Memory Retention for Standby Battery Voltage as Low  
as 2V Min  
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line  
sidebrazed ceramic packages (D suffix) and in 18 lead dual-  
in-line plastic packages (E suffix).  
• All Inputs and Outputs Directly TTL Compatible  
• Three-State Outputs  
• Low Standby and Operating Power  
Ordering Information  
200ns  
MWS5114E3  
250ns  
300ns  
MWS5114E1  
TEMPERATURE RANGE  
PACKAGE  
PDIP  
Burn-In  
SBDIP  
Burn-In  
PKG. NO.  
o
o
MWS5114E2  
0 C to +70 C  
E18.3  
E18.3  
MWS5114E2X  
MWS5114D2  
o
o
MWS5114D3  
MWS5114D3X  
MWS5114D1  
0 C to +70 C  
D18.3  
D18.3  
Pinout  
MWS5114  
(PDIP, SBDIP)  
TOP VIEW  
1
2
3
4
5
6
7
8
9
18 V  
DD  
A6  
A5  
A4  
A3  
A0  
A1  
A2  
CS  
17 A7  
16 A8  
15 A9  
14 I/O1  
13 I/O2  
12 I/O3  
11 I/O4  
10  
V
WE  
SS  
OPERATIONAL MODES  
FUNCTION  
CS  
0
WE  
1
DATA PINS  
Output: Dependent on data  
Input  
Read  
Write  
0
0
Not Selected  
1
X
High Impedance  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 1325.2  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19969-160  

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