MWS5114
1024-Word x 4-Bit
LSI Static RAM
March 1997
Features
Description
• Fully Static Operation
The MWS5114 is a 1024 word by 4-bit static random access
memory that uses the ion-implanted silicon gate comple-
mentary MOS (CMOS) technology. It is designed for use in
memory systems where low power and simplicity in use are
desirable. This type has common data input and data output
and utilizes a single power supply of 4.5V to 6.5V.
• Industry Standard 1024 x 4 Pinout (Same as Pinouts
for 6514, 2114, 9114, and 4045 Types)
• Common Data Input and Output
• Memory Retention for Standby Battery Voltage as Low
as 2V Min
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line
sidebrazed ceramic packages (D suffix) and in 18 lead dual-
in-line plastic packages (E suffix).
• All Inputs and Outputs Directly TTL Compatible
• Three-State Outputs
• Low Standby and Operating Power
Ordering Information
200ns
MWS5114E3
250ns
300ns
MWS5114E1
TEMPERATURE RANGE
PACKAGE
PDIP
Burn-In
SBDIP
Burn-In
PKG. NO.
o
o
MWS5114E2
0 C to +70 C
E18.3
E18.3
MWS5114E2X
MWS5114D2
o
o
MWS5114D3
MWS5114D3X
MWS5114D1
0 C to +70 C
D18.3
D18.3
Pinout
MWS5114
(PDIP, SBDIP)
TOP VIEW
1
2
3
4
5
6
7
8
9
18 V
DD
A6
A5
A4
A3
A0
A1
A2
CS
17 A7
16 A8
15 A9
14 I/O1
13 I/O2
12 I/O3
11 I/O4
10
V
WE
SS
OPERATIONAL MODES
FUNCTION
CS
0
WE
1
DATA PINS
Output: Dependent on data
Input
Read
Write
0
0
Not Selected
1
X
High Impedance
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 1325.2
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