Datasheet > MWS5114E3

MWS5114E3

更新时间： 2024-10-27 22:34:15

品牌	Logo	应用领域
英特矽尔 - INTERSIL		内存集成电路静态存储器光电二极管
页数	文件大小	规格书
7页	32K
描述
1024-Word x 4-Bit LSI Static RAM

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MWS5114E3 数据手册

MWS5114

1024-Word x 4-Bit

LSI Static RAM

March 1997

Features

Description

• Fully Static Operation

The MWS5114 is a 1024 word by 4-bit static random access

memory that uses the ion-implanted silicon gate comple-

mentary MOS (CMOS) technology. It is designed for use in

memory systems where low power and simplicity in use are

desirable. This type has common data input and data output

and utilizes a single power supply of 4.5V to 6.5V.

• Industry Standard 1024 x 4 Pinout (Same as Pinouts

for 6514, 2114, 9114, and 4045 Types)

• Common Data Input and Output

• Memory Retention for Standby Battery Voltage as Low

as 2V Min

The MWS5114 is supplied in 18 lead, hermetic, dual-in-line

sidebrazed ceramic packages (D sufﬁx) and in 18 lead dual-

in-line plastic packages (E sufﬁx).

• All Inputs and Outputs Directly TTL Compatible

• Three-State Outputs

• Low Standby and Operating Power

Ordering Information

200ns

MWS5114E3

250ns

300ns

MWS5114E1

TEMPERATURE RANGE

PACKAGE

PDIP

Burn-In

SBDIP

Burn-In

PKG. NO.

MWS5114E2

0 C to +70 C

E18.3

MWS5114E2X

MWS5114D2

MWS5114D3

MWS5114D3X

MWS5114D1

0 C to +70 C

D18.3

Pinout

MWS5114

(PDIP, SBDIP)

TOP VIEW

18 V

17 A7

16 A8

15 A9

14 I/O1

13 I/O2

12 I/O3

11 I/O4

OPERATIONAL MODES

FUNCTION

DATA PINS

Output: Dependent on data

Input

Read

Write

Not Selected

High Impedance

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

File Number 1325.2

12 3 4 5 6 7

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