Datasheet > MW7IC18100GNR1

MW7IC18100GNR1

更新时间： 2024-01-06 11:50:52

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		放大器功率放大器
页数	文件大小	规格书
32页	1027K
描述
RF LDMOS Wideband Integrated Power Amplifiers

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数据手册

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MW7IC18100GNR1 数据手册

Document Number: MW7IC18100N

Rev. 2, 4/2008

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

The MW7IC18100N wideband integrated circuit is designed with on-chip

matching that makes it usable from 1805 to 2050 MHz. This multi-stage

structure is rated for 24 to 32 Volt operation and covers all typical cellular base

station modulations including GSM EDGE and CDMA.

MW7IC18100NR1

MW7IC18100GNR1

MW7IC18100NBR1

Final Application

1990 MHz, 100 W, 28 V

GSM/GSM EDGE

RF LDMOS WIDEBAND

• Typical GSM Performance: V_DD= 28 Volts, I_DQ1= 180 mA, I_DQ2= 1000 mA,

P_out= 100 Watts CW, 1805-1880 MHz or 1930-1990 MHz

Power Gain — 30 dB

Power Added Efficiency — 48%

INTEGRATED POWER AMPLIFIERS

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ1= 215 mA, I_DQ2

800 mA, P_out= 40 Watts Avg., 1805-1880 MHz or 1930-1990 MHz

Power Gain — 31 dB

CASE 1618-02

TO-270 WB-14

PLASTIC

Power Added Efficiency — 35%

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -80 dBc

EVM — 1.5% rms

MW7IC18100NR1

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW

CASE 1621-02

TO-270 WB-14 GULL

PLASTIC

Output Power

• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 120 W CW

P_out

MW7IC18100GNR1

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

and Common Source Scattering Parameters

CASE 1617-02

TO-272 WB-14

PLASTIC

• On-Chip Matching (50 Ohm Input, DC Blocked)

• Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function ⁽¹⁾

MW7IC18100NBR1

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

DS1

RF /V

DS1

out DS2

RF /V

out DS2

RF /V

out DS2

GS1

GS2

GS1

Quiescent Current

Temperature Compensation

DS1

(1)

GS2

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1977 or AN1987.

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...32

中文翻译

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与MW7IC18100GNR1相关器件

型号	品牌	获取价格	描述	数据表
MW7IC18100NBR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC18100NR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC2020N	FREESCALE	获取价格	RF LDMOS Wideband Integrated
MW7IC2020NT1	FREESCALE	获取价格	RF LDMOS Wideband Integrated
MW7IC2040GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC2040NBR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC2040NR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC2220GNR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC2220NBR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers
MW7IC2220NR1	FREESCALE	获取价格	RF LDMOS Wideband Integrated Power Amplifiers

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