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MW7IC2750NR1_10

更新时间： 2024-09-24 10:40:39
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飞思卡尔 - FREESCALE 放大器功率放大器
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RF LDMOS Wideband Integrated Power Amplifiers

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Document Number: MW7IC2750N  
Rev. 2, 2/2010  
Freescale Semiconductor  
Technical Data  
RF LDMOS Wideband Integrated  
Power Amplifiers  
The MW7IC2750N wideband integrated circuit is designed with on- chip  
matching that makes it usable from 2300- 2700 MHz. This multi- stage  
structure is rated for 26 to 32 Volt operation and covers all typical cellular  
base station modulation formats.  
MW7IC2750NR1  
MW7IC2750GNR1  
MW7IC2750NBR1  
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,  
Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,  
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability  
on CCDF.  
2500-2700 MHz, 8 W AVG., 28 V  
WiMAX  
RF LDMOS WIDEBAND  
INTEGRATED POWER AMPLIFIERS  
ꢀPower Gain — 26 dB  
ꢀPower Added Efficiency — 17%  
ꢀDevice Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF  
ꢀACPR @ 8.5 MHz Offset — -49 dBc in 1 MHz Channel Bandwidth  
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW  
CASE 1618-02  
TO-270 WB-14  
PLASTIC  
Output Power (3 dB Input Overdrive from Rated Pout  
)
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 80 W CW  
Pout  
MW7IC2750NR1  
• Typical Pout @ 1 dB Compression Point ] 50 Watts CW  
Driver Applications  
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,  
Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,  
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability  
on CCDF.  
CASE 1621-02  
TO-270 WB-14 GULL  
PLASTIC  
ꢀPower Gain — 26 dB  
ꢀPower Added Efficiency — 11%  
MW7IC2750GNR1  
ꢀDevice Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF  
ꢀACPR @ 8.5 MHz Offset — -57 dBc in 1 MHz Channel Bandwidth  
Features  
CASE 1617-02  
TO-272 WB-14  
PLASTIC  
• 100% PAR Tested for Guaranteed Output Power Capability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
and Common Source S-Parameters  
MW7IC2750NBR1  
• On-Chip Matching (50 Ohm Input, DC Blocked)  
• Integrated Quiescent Current Temperature Compensation with  
Enable/Disable Function (1)  
• Integrated ESD Protection  
• Greater Negative Gate-Source Voltage Range for Improved Class C Operation  
• 225°C Capable Plastic Package  
• RoHS Compliant  
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
V
V
1
2
DS1  
GS2  
V
3
4
5
6
7
GS1  
NC  
NC  
14  
13  
RF /V  
out DS2  
V
DS1  
RF  
RF  
in  
in  
NC  
NC  
8
9
RF  
in  
RF /V  
out DS2  
RF /V  
out DS2  
V
V
V
10  
11  
12  
GS1  
GS2  
DS1  
V
V
GS1  
Quiescent Current  
Temperature Compensation  
(1)  
(Top View)  
GS2  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
ꢁꢂ1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.  
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.  
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