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MW7IC2425GNR1 PDF预览

MW7IC2425GNR1

更新时间: 2024-01-06 06:04:47
品牌 Logo 应用领域
恩智浦 - NXP 局域网放大器光电二极管晶体管
页数 文件大小 规格书
21页 925K
描述
Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V

MW7IC2425GNR1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-270
包装说明:FLANGE MOUNT, R-PDFM-G16针数:16
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.67
其他特性:ESD PROTECTION配置:SINGLE
最小漏源击穿电压:65 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:S BANDJESD-30 代码:R-PDFM-G16
JESD-609代码:e3湿度敏感等级:3
元件数量:1端子数量:16
工作模式:ENHANCEMENT MODE最高工作温度:225 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MW7IC2425GNR1 数据手册

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Document Number: MW7IC2425N  
Rev. 0, 3/2009  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
MW7IC2425NR1  
MW7IC2425GNR1  
MW7IC2425NBR1  
N-Channel Enhancement-Mode Lateral MOSFETs  
Designed primarily for CW large-signal output and driver applications at  
2450 MHz. Devices are suitable for use in industrial, medical and scientific  
applications.  
Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA,  
Pout = 25 Watts CW, f = 2450 MHz  
Power Gain — 27.7 dB  
Power Added Efficiency — 43.8%  
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW  
Output Power  
Features  
2450 MHz, 25 W CW, 28 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Qualified Up to a Maximum of 28 VDD Operation  
Integrated Quiescent Current Temperature Compensation with  
Enable/Disable Function (1)  
Integrated ESD Protection  
Excellent Thermal Stability  
CASE 1886-01  
TO-270 WB-16  
PLASTIC  
225°C Capable Plastic Package  
RoHS Compliant  
MW7IC2425NR1  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
CASE 1887-01  
TO-270 WB-16 GULL  
PLASTIC  
MW7IC2425GNR1  
CASE 1329-09  
TO-272 WB-16  
PLASTIC  
MW7IC2425NBR1  
GND  
V
NC  
NC  
NC  
1
2
3
4
5
16  
15  
GND  
NC  
DS1  
V
DS1  
RF  
RF /V  
out DS2  
in  
RF  
6
14  
RF /V  
out DS2  
in  
7
8
9
10  
NC  
V
V
GS1  
GS2  
V
GS1  
V
GS2  
V
DS1  
Quiescent Current  
Temperature Compensation  
(1)  
13  
12  
NC  
GND  
V
GND  
DS1  
11  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistors.  
Figure 1. Functional Block Diagram  
Figure 2. Pin Connections  
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control  
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.  
© Freescale Semiconductor, Inc., 2009. All rights reserved.  

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