Datasheet > MW7IC2425NR1

MW7IC2425NR1

更新时间： 2024-02-14 21:14:29

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飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MW7IC2425NR1 数据手册

Document Number: MW7IC2425N

Rev. 0, 3/2009

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

MW7IC2425NR1

MW7IC2425GNR1

MW7IC2425NBR1

N-Channel Enhancement-Mode Lateral MOSFETs

Designed primarily for CW large-signal output and driver applications at

2450 MHz. Devices are suitable for use in industrial, medical and scientific

applications.

• Typical CW Performance: V_DD= 28 Volts, I_DQ1= 55 mA, I_DQ2= 195 mA,

P_out= 25 Watts CW, f = 2450 MHz

Power Gain — 27.7 dB

Power Added Efficiency — 43.8%

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW

Output Power

Features

2450 MHz, 25 W CW, 28 V

LATERAL N-CHANNEL

RF POWER MOSFETs

• Qualified Up to a Maximum of 28 V_DDOperation

• Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function ⁽¹⁾

• Integrated ESD Protection

• Excellent Thermal Stability

CASE 1886-01

TO-270 WB-16

PLASTIC

• 225°C Capable Plastic Package

• RoHS Compliant

MW7IC2425NR1

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1887-01

TO-270 WB-16 GULL

PLASTIC

MW7IC2425GNR1

CASE 1329-09

TO-272 WB-16

PLASTIC

MW7IC2425NBR1

GND

DS1

RF /V

out DS2

RF /V

out DS2

GS1

GS2

GS1

GS2

DS1

Quiescent Current

Temperature Compensation

(1)

GND

DS1

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.

MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...21

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